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TC75S56FU(TE85L,F)
器件3D模型
1.277
导航目录
  • 引脚图在P2
  • 封装尺寸在P9P10
  • 标记信息在P2
  • 技术参数、封装参数在P1
  • 应用领域在P11
  • 电气规格在P2
TC75S56FU(TE85L,F)数据手册
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TC75S60F/FU
2014-03-01
1
TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic
TC75S60F, TC75S60FU
Single Operational Amplifier
TC75S60F, TC75S60FU are CMOS operational amplifier with
low supply voltage, low supply current.
Features
High slew rate: SR (V
DD
= 3 V) = 5.1 V/μs (typ.)
The power supply operation range is:
V
DD
= ±0.9 to 3.5 V or 1.8 to 7 V
Low supply current: I
DD
(V
DD
= 3 V) = 330 μA (typ.)
The internally phase compensated operational amplifier.
Small package
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics Symbol Rating Unit
Supply voltage V
DD
, V
SS
7 V
Differential input voltage DV
IN
±7 V
Input voltage V
IN
V
DD
to V
SS
V
Power dissipation P
D
200 mW
Operating temperature T
opr
40 to 85 °C
Storage temperature T
stg
55 to 125 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
TC75S60F
TC75S60FU
Weight
SSOP5-P-0.95 : 0.014 g (typ.)
SSOP5-P-0.65A : 0.006 g (typ.)
Start of commercial production
2000-09

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