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TC75S58F(TE85L,F) 其他数据使用手册 - Toshiba（东芝）
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Toshiba（东芝）
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运算放大器
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TC75S58F(TE85L,F)数据手册
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TC75S58F/FU/FE
2007-11-01
2
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics Symbol Rating Unit
Supply voltage V
DD
, V
SS
±3.5 or 7 V
Differential input voltage DV
IN
±7 V
Input voltage V
IN
V
SS
~V
DD
V
Output current I
O
±35 mA
TC75S58F/FU
200
Power dissipation
TC75S58FE
P
D
100
mW
Operating temperature T
opr
−40~85 °C
Storage temperature T
stg
−55~125 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note: This device’s CMOS structure makes it prone to latch-up. To prevent latch-up, please take the following
precautions:
• Ensure that no I/O pin’s voltage level ever exceeds V
DD
or drops below V
SS
.
In addition, check the power-on timing.
• Do not subject the device to excessive noise.
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