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TC7SH02FTE85L 其他数据使用手册 - Toshiba（东芝）
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TC7SH02FTE85L数据手册
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TC7SH02F/FU
2009-09-09
1
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SH02F, TC7SH02FU
2-Input NOR Gate
Features
• High Speed Operation : t
pd
= 3.6 ns (typ.)
at V
CC
= 5 V, 15 pF
• Low Power Dissipation : I
CC
= 2μA (max) at Ta = 25°C
• Balanced Propagation Delays : t
pLH
≒ t
pHL
• High noise immunity : V
NIH
= V
NIL
=28% V
CC
(min)
• 5.5-V Tolerant Inputs
• Wide Operating Voltage Range : V
CC
= 2 to 5.5V
Marking
Absolute Maximum Ratings
(Ta
=
25°C)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note1: V
OUT
< GND, V
OUT
> V
CC
TC7SH02F
TC7SH02FU
Weight
SSOP5-P-0.95 : 0.016 g (typ.)
SSOP5-P-0.65A : 0.006 g (typ.)
Characteristics Symbol Rating Unit
Supply Voltage V
CC
− 0.5 to 7 V
DC Input Voltage V
IN
− 0.5 to 7 V
DC Output Voltage V
OUT
− 0.5 to V
CC
+ 0.5 V
Input Diode Current I
IK
− 20 mA
Output Diode Current I
OK
± 20 (Note 1) mA
DC Output Current I
OUT
± 25 mA
DC V
CC
/Ground Current I
CC
± 50 mA
Power Dissipation P
D
200 mW
Storage Temperature T
stg
− 65 to 150 °C
Lead Temperature(10s) T
L
260 °C
Pin Assignment
(top view)
5 V
CC
4 OUT Y
IN A 2
GND 3
IN B 1
Product name
H 3
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