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TIC206MS 其他数据使用手册 - Bourns J.W. Miller（伯恩斯）
制造商:
Bourns J.W. Miller（伯恩斯）
分类:
晶闸管
封装:
TO-220
Pictures:
3D模型
符号图
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TIC206MS数据手册
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TIC206 SERIES
SILICON TRIACS
1
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
MT1
MT2
G
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDC2ACA
1
2
3
Sensitive Gate Triacs
4 A RMS
Glass Passivated Wafer
400 V to 700 V Off-State Voltage
Max I
GT
of 5 mA (Quadrants 1 - 3)
absolute maximum ratings over operating case temperature (unless otherwise noted)
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at
the rate of 160 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge
may be repeated aft
er the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
4. This value applies for a maximum averaging time of 20 ms.
RATING SYMBOL VALUE UNIT
Repetitive peak off-state voltage (see Note 1)
TIC206D
TIC206M
TIC206S
V
DRM
400
600
700
V
Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2) I
T(RMS)
4 A
Peak on-state surge current full-sine-wave at (or below) 25°C case temperature (see Note 3) I
TSM
25 A
Peak gate current I
GM
±0.2 A
Peak gate po
wer dissipation at (or below) 85°C case temperature (pulse width ≤ 200 μs) P
GM
1.3 W
Average gate power dissipation at (or below) 85°C case temperature (see Note 4) P
G(AV)
0.3 W
Operating case temperature range T
C
-40 to +110 °C
Storage temperature range T
stg
-40 to +125 °C
Lead temperature 1.6 mm from case for 10 seconds T
L
230 °C
electrical characteristics at 25°C case temperature (unless otherwise noted )
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
I
DRM
Repetitive peak
off-state current
V
D
= rated V
DRM
I
G
= 0 T
C
= 110°C ±1 mA
I
GT
Gate trigger
current
V
supply
= +12 V†
V
supply
= +12 V†
V
supply
= -12 V†
V
supply
= -12 V†
R
L
= 10 Ω
R
L
= 10 Ω
R
L
= 10 Ω
R
L
= 10 Ω
t
p(g)
> 20 μs
t
p(g)
> 20 μs
t
p(g)
> 20 μs
t
p(g)
> 20 μs
0.9
-2.2
-1.8
2.4
5
-5
-5
10
mA
† All voltages are with respect to Main Terminal 1.
This series is currently available,
but not recommended for new
designs.
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