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TIP127 其他数据使用手册 - CJ（长电科技）
制造商:
CJ（长电科技）
封装:
TO-220-3
描述:
TIP127 管装
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
TIP127数据手册
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
TIP120,121,122
Darlington Transistor (NPN)
TIP125,126,127
Darlington Transistor (PNP)
FEATURES
Medium Power Complementary Silicon Transistors
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol Parameter TIP120
TIP125
TIP121
TIP126
TIP122
TIP127
Unit
V
CBO
Collector-Base Voltage 60 80 100 V
V
CEO
Collector-Emitter Voltage 60 80 100 V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current -Continuous 5 A
P
C
* Collector Power Dissipation 1.25 W
R
θJA
Thermal Resistance Junction to Ambient 100 ℃/W
R
θJc
Thermal Resistance Junction to Case
8.33
℃
/W
T
J
Junction Temperature 150
℃
T
stg
Storage Temperature -55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Symbol Test conditions Min Max Unit
Collector-base breakdown voltage TIP120,TIP125
TIP121,TIP126
TIP122,TIP127
V(BR)
CBO
I
C
= 1mA,I
E
=0
60
80
100
V
Collector-emitter breakdown voltage TIP120,TIP125
TIP121,TIP126
TIP122,TIP127
V
CEO
(SUS)
I
C
= 30mA,I
B
=0
60
80
100
V
Collector cut-off current TIP120,TIP125
TIP121,TIP126
TIP122,TIP127
I
CBO
V
CB
= 60 V, I
E
=0
V
CB
= 80 V, I
E
=0
V
CB
= 100V, I
E
=0
0.2 mA
Collector cut-off current TIP120,TIP125
TIP121,TIP126
TIP122,TIP127
I
CEO
V
CE
=30 V, I
B
=0
V
CE
=40 V, I
B
=0
V
CE
=50 V, I
B
=0
0.5 mA
Emitter cut-off current I
EBO
V
EB
=5 V, I
C
=0 2 mA
h
FE(1)
V
CE
= 3V, I
C
=0.5A 1000
DC current gain
h
FE(2)
V
CE
= 3V, I
C
=3 A 1000
Collector-emitter saturation voltage V
CE
(sat)
I
C
=3A,I
B
=12mA
I
C
=5 A,I
B
=20mA
2
4
V
Base-emitter voltage V
BE
V
CE
=3V, I
C
=3 A 2.5 V
Output Capacitance TIP125,TIP126,TIP127
TIP120,TIP121,TIP122
Cob V
CB
=10V, I
E
=0,f=0.1MHz
300
200
pF
TO-126
1
.EMITTER
2.COLLECTOR
3.
BASE
* This test is performed with no heat sink at T
a
=25℃.
www.cj-elec.com 1 E,Oct,2014
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