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TIP30 其他数据使用手册 - Central Semiconductor
制造商:
Central Semiconductor
分类:
双极性晶体管
封装:
TO-220-3
Pictures:
3D模型
符号图
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引脚图
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TIP30数据手册
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of 3 Go
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MAXIMUM RATINGS: (T
C
=25°C unless otherwise noted)
SYMBOL TIP30 TIP30A TIP30B TIP30C UNITS
Collector-Base Voltage V
CBO
40 60 80 100 V
Collector-Emitter Voltage V
CEO
40 60 80 100 V
Emitter-Base Voltage V
EBO
5.0 V
Continuous Collector Current I
C
1.0 A
Peak Collector Current I
CM
3.0 A
Continuous Base Current I
B
0.4 A
Power Dissipation P
D
30 W
Power Dissipation (T
A
=25°C) P
D
2.0 W
Operating and Storage Junction Temperature T
J
, T
stg
-65 to +150 °C
ELECTRICAL CHARACTERISTICS: (T
C
=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
I
CEO
V
CE
=30V (TIP30, TIP30A) 0.3 mA
I
CEO
V
CE
=60V (TIP30B, TIP30C) 0.3 mA
I
CES
V
CE
=Rated V
CEO
0.2 mA
I
EBO
V
EB
=5.0V 1.0 mA
BV
CEO
I
C
=30mA (TIP30) 40 V
BV
CEO
I
C
=30mA (TIP30A) 60 V
BV
CEO
I
C
=30mA (TIP30B) 80 V
BV
CEO
I
C
=30mA (TIP30C) 100 V
V
CE(SAT)
I
C
=1.0A, I
B
=125mA 0.7 V
V
BE(ON)
V
CE
=4.0V, I
C
=1.0A 1.3 V
h
FE
V
CE
=4.0V, I
C
=0.2A 40
h
FE
V
CE
=4.0V, I
C
=1.0A 15 75
h
fe
V
CE
=10V, I
C
=0.2A, f=1.0kHz 20
f
T
V
CE
=10V, I
C
=0.2A, f=1.0MHz 3.0 MHz
t
on
I
C
=1.0A, I
B1
= I
B2
=0.1A, R
L
=30Ω 0.3 μs
t
off
I
C
=1.0A, I
B1
= I
B2
=0.1A, R
L
=30Ω 1.0 μs
TIP30
TIP30A
TIP30B
TIP30C
SILICON
PNP POWER TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR TIP30 series devices
are silicon PNP epitaxial-base power transistors designed
for power amplifier and high speed switching applications.
MARKING: FULL PART NUMBER
TO-220 CASE
R1 (12-March 2014)
www.centralsemi.com
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