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TIP32 其他数据使用手册 - CJ（长电科技）
制造商:
CJ（长电科技）
封装:
TO-220-3
描述:
三极管(晶体管) TIP32 TO-220-3L 15-75
Pictures:
3D模型
符号图
焊盘图
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应用领域在P1
电气规格在P1
导航目录
TIP32数据手册
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of 3 Go
若手册格式错乱，请下载阅览PDF原文件
TO-220-3L
1. BASE
2. COLLECTOR
3. EMITTER
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate Transistors
TIP32/32A/32B/32C
TRANSISTOR (PNP)
FEATURES
Medium Power Linear Switching Applications
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Symbol Test conditions Min M ax Unit
Collector-base breakdown voltage TIP32
TIP32A
TIP32B
TIP32C
V(BR)
CBO
I
C
= -1mA, I
E
=0
-40
-60
-80
-100
V
Collector-emitter breakdown voltage * TIP32
TIP32A
TIP32B
TIP32C
V
CEO(sus)
I
C
= -30mA, I
B
=0
-40
-60
-80
-100
V
Emitter-base breakdown voltage
V(BR)
EBO
I
E
= -1mA, I
C
=0 -5 V
Collector cut-off current TIP32
TIP32A
TIP32B
TIP32C
I
CBO
V
CB
=-40V,I
E
=0
V
CB
=-60V, I
E
=0
V
CB
=-80V, I
E
=0
V
CB
=-100V, I
E
=0
-200 μA
Collector cut-off current TIP32/32A
TIP32B/32C
I
CEO
V
CE
= -30V, I
B
= 0
V
CE
= -60V, I
B
= 0
-0.3 mA
Emitter cut-off current
I
EBO
V
EB
=-5V, I
C
=0 -1 mA
h
FE(1)
V
CE
= -4V, I
C
=-1A 25
DC current gain
h
FE(2)
V
CE
=-4 V, I
C
=-3A 15 75
Collector-emitter saturation voltage
V
CE(sat)
I
C
=-3A, I
B
=-0.375A -1.2 V
Base-emitter voltage
V
BE(on)
V
CE
=-4V, I
C
=-3A -1.8 V
Transition frequency
f
T
V
CE
=-10V , I
C
=-0.5A 3 MHz
* Pulse Test: PW≤300µs, Duty Cycle≤2%.
Symbol Parameter TIP32 TIP32A TIP32B TIP32C Unit
V
CBO
Collector-Base Voltage -40 -60 -80 -100 V
V
CEO
Collector-Emitter Voltage -40 -60 -80 -100 V
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current -3 A
P
C
Collector Power Dissipation 2 W
R
θJA
Thermal Resistance from Junction to Ambient 62.5
T
j
Junction Temperature 150
℃
T
stg
Storage Temperature -55~+150
℃
www.cj-elec.com 1 D,Nov,2014
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