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器件3D模型￥ 35.436
TMP01FS 其他数据使用手册 - ADI（亚德诺）
制造商:
ADI（亚德诺）
分类:
温度传感器
封装:
SOIC-8
描述:
低功耗可编程温度控制器 Low Power Programmable Temperature Controller
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
引脚图在P3Hot
典型应用电路图在P23P24P25P26
原理图在P9
封装尺寸在P31P33P34
标记信息在P31
封装信息在P31P32P33P34
技术参数、封装参数在P4P10
应用领域在P26
电气规格在P5P25
型号编号列表在P10
导航目录
TMP01FS数据手册
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若手册格式错乱，请下载阅览PDF原文件
4
TMP461
ZHCSDW3B –JUNE 2015–REVISED AUGUST 2016
www.ti.com.cn
Copyright © 2015–2016, Texas Instruments Incorporated
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN MAX UNIT
Power supply V+ –0.3 6 V
Input voltage
THERM, ALERT/THERM2, SDA and SCL only –0.3 6
VD+, A0, A1 –0.3 (V+) + 0.3
D– only –0.3 0.3
Input current 10 mA
Operating temperature –55 150 °C
Junction temperature (T
J
max) 150 °C
Storage temperature, T
stg
–60 150 °C
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.2 ESD Ratings
VALUE UNIT
V
(ESD)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001
(1)
±2000
V
Charged device model (CDM), JEDEC specification JESD22-C101
(2)
±1000
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
V+ Supply voltage 1.7 3.3 3.6 V
T
A
Operating free-air temperature –40 125 °C
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
7.4 Thermal Information
THERMAL METRIC
(1)
TMP461
UNITRUN (WQFN)
10 PINS
R
θJA
Junction-to-ambient thermal resistance 123.1 °C/W
R
θJC(top)
Junction-to-case (top) thermal resistance 60.1 °C/W
R
θJB
Junction-to-board thermal resistance 78.1 °C/W
ψ
JT
Junction-to-top characterization parameter 4.6 °C/W
ψ
JB
Junction-to-board characterization parameter 78.1 °C/W
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