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TPD1E05U06DPYEVM 其他数据使用手册 - TI（德州仪器）
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TPD1E05U06DPYEVM数据手册
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© 2013 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C - 50 V
V
DGR
T
J
= 25°C to 150°C, R
GS
= 1MΩ - 50 V
V
GSS
Continuous ±15 V
V
GSM
Transient ±25 V
I
D25
T
C
= 25°C - 32 A
I
DM
T
C
= 25°C, Pulse Width Limited by T
JM
-110 A
I
A
T
C
= 25°C - 32 A
E
AS
T
C
= 25°C 200 mJ
P
D
T
C
= 25°C83W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6mm (0.062 in.) from Case for 10s 300 °C
T
SOLD
Plastic Body for 10s 260 °C
M
d
Mounting Torque (TO-220) 1.13/10 Nm/lb.in.
Weight TO-252 0.35 g
TO-263 2.50 g
TO-220 3.00 g
DS99967C(01/13)
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= - 250μA - 50 V
V
GS(th)
V
DS
= V
GS
, I
D
= - 250μA - 2.5 - 4.5 V
I
GSS
V
GS
= ± 15V, V
DS
= 0V ±50 nA
I
DSS
V
DS
= V
DSS
, V
GS
= 0V - 3 μA
T
J
= 125°C -100 μA
R
DS(on)
V
GS
= -10V, I
D
= 0.5 • I
D25
, Note 1 39 mΩ
TrenchP
TM
Power MOSFETs
P-Channel Enhancement Mode
Avalanche Rated
IXTY32P05T
IXTA32P05T
IXTP32P05T
V
DSS
= - 50V
I
D25
= - 32A
R
DS(on)
≤≤
≤≤
≤ 39m
ΩΩ
ΩΩ
Ω
Features
z
International Standard Packages
z
Avalanche Rated
z
Extended FBSOA
z
Fast Intrinsic Diode
z
Low R
DS(ON)
and Q
G
Advantages
z
Easy to Mount
z
Space Savings
z
High Power Density
Applications
z
High-Side Switching
z
Push Pull Amplifiers
z
DC Choppers
z
Automatic Test Equipment
z
Current Regulators
z
Battery Charger Applications
TO-252 (IXTY)
G
S
D (Tab)
G = Gate D = Drain
S = Source Tab = Drain
TO-263 AA (IXTA)
G
S
D (Tab)
G
D
S
TO-220AB (IXTP)
D (Tab)
G
D
S
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