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器件3D模型￥ 4.61
TPS7A8801RTJR 其他数据使用手册 - TI（德州仪器）
制造商:
TI（德州仪器）
分类:
稳压芯片
封装:
WFQFN-20
描述:
1A、低噪声、高 PSRR、双通道可调节超低压降稳压器 20-QFN -40 to 125
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TPS7A8801RTJR数据手册
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4
TPS7A4201
ZHCS515A –DECEMBER 2011–REVISED AUGUST 2015
www.ti.com.cn
Copyright © 2011–2015, Texas Instruments Incorporated
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.2 ESD Ratings
VALUE UNIT
V
(ESD)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001
(1)
±2500
V
Charged-device model (CDM), per JEDEC specification JESD22-
C101
(2)
±500
6.3 Recommended Operating Conditions
over operating junction temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VIN 7 28 V
VOUT 1.161 26 V
VEN 0 28 V
IOUT 0 50 mA
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
6.4 Thermal Information
THERMAL METRIC
(1)
TPS7A4201
UNITDGN (MSOP)
8 PINS
R
θJA
Junction-to-ambient thermal resistance 66.7 °C/W
R
θJC(top)
Junction-to-case (top) thermal resistance 54.1 °C/W
R
θJB
Junction-to-board thermal resistance 38.1 °C/W
ψ
JT
Junction-to-top characterization parameter 2.0 °C/W
ψ
JB
Junction-to-board characterization parameter 37.8 °C/W
R
θJC(bot)
Junction-to-case (bottom) thermal resistance 15.5 °C/W
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