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UMD12-N-TR 其他数据使用手册 - ROHM Semiconductor（罗姆半导体）
制造商:
ROHM Semiconductor（罗姆半导体）
封装:
SOT-363
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
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技术参数、封装参数在P2
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UMD12-N-TR数据手册
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© 2013 ROHM Co., Ltd. All rights reserved.
EMD12 / UMD12N
NPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors)
<For DTr1(NPN)>
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Outline
<For DTr2(PNP)>
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Features
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Inner circuit
1) Both the DTC144E chip and DTA144E chip
in one package.
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
3) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
4) Only the on/off conditions need to be set for
operation, making the circuit design easy.
5) Lead Free/RoHS Compliant.
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Application
Inverter circuit, Interface circuit, Driver circuit
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Packaging specifications
Parameter
Value
EMT6
UMT6
V
CC
50V
I
C(MAX.)
100mA
R
2
47kW
R
1
47kW
Part No.
Package
Package
size
(mm)
Taping
code
Reel size
(mm)
Tape width
(mm)
Basic
ordering
unit (pcs)
Marking
R
2
47kW
I
C(MAX.)
-100mA
8,000
D12
EMD12
EMT6
1616
T2R
180
8
3,000
D12
UMD12N
UMT6
2021
TR
180
8
R
1
47kW
Parameter
Value
V
CC
-50V
EMD12
(SC-107C)
(1)
(2)
(3)
(6)
(5)
(4)
UMD12N
SOT-353 (SC-88)
(1)
(2)
(3)
(6)
(5)
(4)
OUT
(6)
(2)
IN
(1)
GND
(3)
OUT
IN
(5)
GND
(4)
DTr1
DTr2
R
2
R
1
R
1
R
2
1/7
2013.07 - Rev.B
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