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The above information is the exclusive intellectual property of Winbond Electronics and shall not be disclosed, distributed or reproduced without permission from Winbond.
Table No.: 1110-0001-08-A
Product / Process Change Notice
No.: Z200-PCN-DM201608-03-A Date: 08/24/2016
Change Title : W25Q80JV “J-Series” (58nm) to replace W25Q80DV “D-Series” (90nm) 8Mb SpiFlash®
Memories
Change Classification: Major Minor
Change item : Design Raw Material Wafer FAB Assembly Packing Testing Others
Affected Product(s) :
W25Q80DVSNIG , W25Q80DVSSIG , W25Q80DVSVIG , W25Q80DVZPIG , W25Q80DVUXIE
Description of Change(s)
The W25Q80JV 8Mb SpiFlash® Memories use Winbond’s 58nm Flash technology. It is function-compatible with
W25Q80DV 90nm devices offering improved performance, features and availability. (refer the Attachment I)
Reason for Change(s) :
Improve features and Command backward compatible with W25Q80DV.
Impact of Change(s) : ( positive & negative )
Form : No Change
Fit : No Change
Function : No Concern (Please refer to attachment I)
Reliability : No Concern (Please refer to attachment II)
Hazardous Substances: No Concern (Please refer to attachment III)
Qualification Plan/ Results :
Based on Winbond W25Q80JV Serial Flash Reliability report, the new product meets our criteria and no quality
concern (refer to Attachment II in details)
Implementation Plan :
Please refer to Attachment IV for details.
Date Code: onward Lot No: onward Proposed first ship date: Refer to Attachment IV in details
Originator: (QA)
Approval: (QA
Dept. Manager)
Approval: (QRA
Director)
Contact for Questions
& Concerns

W25Q80DVUXIE TR 数据手册

Winbond Electronics(华邦电子股份)
71 页 / 2.04 MByte
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4 页 / 0.26 MByte
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73 页 / 3.11 MByte

W25Q80 数据手册

Winbond Electronics(华邦电子股份)
8-Mbit(1M x 8bit),SPI接口,工作电压:2.7V to 3.6V
Winbond Electronics(华邦电子股份)
W25Q80DVSNIG 管装
Winbond Electronics(华邦电子股份)
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Winbond Electronics(华邦电子股份)
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Winbond Electronics(华邦电子股份)
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