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MAX6225AESA+ 产品设计参考手册 - Maxim Integrated(美信)
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电压基准芯片
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SOIC-8
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MAXIM INTEGRATED PRODUCTS MAX6225AESA+. 电压基准, 精密, 低噪, 系列 - 固定, MAX6225系列, 2.5V, SOIC-8
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Ultralow Noise XFET Voltage References
with Current Sink and Source Capability
Data Sheet
ADR430/ADR431/ADR433/ADR434/ADR435
Rev. M Document Feedback
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 ©2003–2015 Analog Devices, Inc. All rights reserved.
Technical Support www.analog.com
FEATURES
Low noise (0.1 Hz to 10.0 Hz): 3.5 µV p-p @ 2.5 V output
No external capacitor required
Low temperature coefficient
A Grade: 10 ppm/°C maximum
B Grade: 3 ppm/°C maximum
Load regulation: 15 ppm/mA
Line regulation: 20 ppm/V
Wide operating range
ADR430: 4.1 V to 18 V
ADR431: 4.5 V to 18 V
ADR433: 5.0 V to 18 V
ADR434: 6.1 V to 18 V
ADR435: 7.0 V to 18 V
High output source and sink current: +30 mA and −20 mA
Wide temperature range: −40°C to +125°C
APPLICATIONS
Precision data acquisition systems
High resolution data converters
Medical instruments
Industrial process control systems
Optical control circuits
Precision instruments
PIN CONFIGURATIONS
NOTES
1. NIC = NO INTERNAL CONNECTION
2. TP = TEST PIN (DO NOT CONNECT)
ADR43x
TOP VIEW
(Not to Scale)
TP
1
V
IN
2
NIC
3
GND
4
TP
COMP
V
OUT
TRIM
8
7
6
5
04500-001
Figure 1. 8-Lead MSOP (RM-8)
NOTES
1. NIC = NO INTERNAL CONNECTION
2. TP = TEST PIN (DO NOT CONNECT)
ADR43x
TOP VIEW
(Not to Scale)
TP
1
V
IN
2
NIC
3
GND
4
TP
COMP
V
OUT
TRIM
8
7
6
5
04500-041
Figure 2. 8-Lead SOIC_N (R-8)
GENERAL DESCRIPTION
The ADR43x series is a family of XFET® voltage references
featuring low noise, high accuracy, and low temperature drift
performance. Using Analog Devices, Inc., patented temperature
drift curvature correction and XFET (eXtra implanted junction
FET) technology, voltage change vs. temperature nonlinearity in
the ADR43x is minimized.
The XFET references operate at lower current (800 µA) and
lower supply voltage headroom (2 V) than buried Zener
references. Buried Zener references require more than 5 V
headroom for operation. The ADR43x XFET references are
the only low noise solutions for 5 V systems.
The ADR43x family has the capability to source up to 30 mA of
output current and sink up to 20 mA. It also comes with a trim
terminal to adjust the output voltage over a 0.5% range without
compromising performance.
The ADR43x is available in 8-lead MSOP and 8-lead narrow
SOIC packages. All versions are specified over the extended
industrial temperature range of −40°C to +125°C.
Table 1. Selection Guide
Model
Output
Voltage (V)
Accuracy (mV)
Temperature
Coefficient
(ppm/°C)
ADR430A 2.048 ±3 10
ADR430B 2.048 ±1 3
ADR431A 2.500 ±3 10
ADR431B 2.500 ±1 3
ADR433A 3.000 ±4 10
ADR433B 3.000 ±1.5 3
ADR434A 4.096 ±5 10
ADR434B 4.096 ±1.5 3
ADR435A
5.000
±6
10
ADR435B 5.000 ±2 3
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