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MHT1008N 产品设计参考手册 - NXP（恩智浦）
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MHT1008N数据手册
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MHT1008N
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 12.5 W CW high efficiency RF power transistor is designed for consumer
and commercial cooking applications operating in the 2450 MHz ISM band.
Typical Performance:
V
DD
=28Vdc,I
DQ
=110mA
Frequency
(MHz)
Signal Type
G
ps
(dB)
PAE
(%)
P
out
(W)
2400
CW
18.5 57.5 12.5
2450 18.6 56.3 12.5
2500 18.3 55.6 12.5
Load Mismatch/Ruggedness
Frequency
(MHz)
Signal Type VSWR
P
in
(dBm)
Test
Voltage
Result
2450 CW >5:1
at all Phase
Angles
26
(3 dB
Overdrive)
32 No Device
Degradation
Features
Characterized with series equivalent large--signal impedance parameters and
common source S--parameters
Qualified for operation at 32 Vdc
Integrated ESD protection
150C case operating temperature
150C die temperature capability
Target Applications
Consumer cooking as PA driver
Commercial cooking as PA driver
Document Number: MHT1008N
Rev. 0, 5/2016
Freescale Semiconductor
Technical Data
2450 MHz, 12.5 W CW, 28 V
RF POWER LDMOS TRANSISTOR
FORCONSUMERAND
COMMERCIAL COOKING
MHT1008N
PLD--1.5W
PLASTIC
Figure 1. Pin Connections
Note: The center pad on the backside of the
package is the source terminal for the
transistor.
(Top View)
DrainGate
Freescale Semiconductor, Inc., 2016. All rights reserved.
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