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REF3225AMDBVREP
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REF3225AMDBVREP数据手册
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1
G
ND_F
GND_S
3
2
E
NABLE
5
6
4
O
UT_S
IN
OUT_F
REF3212
REF3225
REF3230
REF3240
REF3220
R
EF3233
TEMPERATURE DRIFT
(0
_
C to +125
_
C)
Population
0.5 1.5 2.5 3.5 4.5
Drift (ppm/
_
C)
76.5654321 5.5
DROPOUT VOLTAGE
vs LOAD CURRENT
160
140
120
100
80
60
40
20
0
Dropout Voltage (mV)
15 151050
5
10
Load Current (mA)
4
0
_
C
+25
_
C
+125
_
C
REF3212-EP, REF3220-EP, REF3225-EP
REF3230-EP, REF3233-EP, REF3240-EP
www.ti.com
SBVS078B OCTOBER 2006 REVISED AUGUST 2011
4 ppm/°C, 100 μA SOT23-6 SERIES VOLTAGE REFERENCES
Check for Samples: REF3212-EP, REF3220-EP, REF3225-EP, REF3230-EP, REF3233-EP, REF3240-EP
1
FEATURES APPLICATIONS
Excellent Specified Drift Performance: Portable Equipment
7ppm/°C (Max) at 0°C to 125°C Data Acquisition Systems
20ppm/°C (Max) at 40°C to 125°C Medical Equipment
40ppm/°C (Max) at 55°C to 125°C Test Equipment
Microsize Package: SOT23-6
High Output Current: ±10 mA
High Accuracy: 0.01%
Low Quiescent Current: 100 μA
Low Dropout: 5 mV
SUPPORTS DEFENSE, AEROSPACE,
AND MEDICAL APPLICATIONS
Controlled Baseline
One Assembly/Test Site
One Fabrication Site
Available in Military (55°C/125°C)
Temperature Range
(1)
Extended Product Life Cycle
Extended Product-Change Notification
Product Traceability
(1) Additional temperature ranges are available - contact factory
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Copyright © 20062011, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Not Recommended For
New Designs

REF3225AMDBVREP 数据手册

TI(德州仪器)
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REF3225 数据手册

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