Datasheet 搜索 > MOS管 > ST Microelectronics（意法半导体） > STF10LN80K5 数据手册 > STF10LN80K5 产品设计参考手册 1/24 页
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STF10LN80K5 产品设计参考手册 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
MOS管
封装:
TO-220-3
描述:
STF10LN80K5 系列 800 V 8 A 0.63 Ohm N-沟道 MDmesh™ K5 功率 Mosfet-TO-220FP
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
技术参数、封装参数在P24
应用领域在P24
导航目录
STF10LN80K5数据手册
Page:
of 24 Go
若手册格式错乱，请下载阅览PDF原文件
November 2013 Doc ID 023670 Rev 1 1/24
UM1575
User manual
Spice model tutorial for Power MOSFETs
Introduction
This document describes ST’s Spice model versions available for Power MOSFETs. This is
a guide designed to support user choosing the best model for his goals. In fact, it explains
the features of different model versions both in terms of static and dynamic characteristics
and simulation performance, in order to find the right compromise between the computation
time and accuracy. For example, the self-heating model (V3 version), which accurately
reproduces the thermal response of all electrical parameters, requires a considerable
simulation effort.
Finally, an example shows how the self-heating model works.
Spice models describe the characteristics of typical devices and don't guarantee the
absolute representation of product specifications and operating characteristics; the
datasheet is the only document providing product specifications.
Although simulation is a very important tool to evaluate the device’s performance, the exact
device’s behavior in all situations is not predictable, therefore the final laboratory test is
necessary.
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