Datasheet 搜索 > 微控制器 > ST Microelectronics（意法半导体） > STM32F207VCT6TR 数据手册 > STM32F207VCT6TR 产品设计参考手册 1/29 页
器件3D模型￥ 133.277
STM32F207VCT6TR 产品设计参考手册 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
微控制器
封装:
LQFP-100
描述:
ARM Cortex-M3 120MHz 闪存：256K@x8bit RAM：132KB
Pictures:
3D模型
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焊盘图
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页面导航:
技术参数、封装参数在P29
应用领域在P29
电气规格在P25
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STM32F207VCT6TR数据手册
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若手册格式错乱，请下载阅览PDF原文件
June 2013 DocID15687 Rev 5 1/29
PM0059
Programming manual
STM32F205/215, STM32F207/217 Flash programming manual
Introduction
This programming manual describes how to program the Flash memory of STM32F205/215
and STM32F207/217 microcontrollers. For convenience, these will be referred to as
STM32F20x and STM32F21x in the rest of this document unless otherwise specified.
The STM32F20x and STM32F21xembedded Flash memory can be programmed using in-
circuit programming or in-application programming.
The in-circuit programming (ICP) method is used to update the entire contents of the
Flash memory, using the JTAG, SWD protocol or the boot loader to load the user application
into the microcontroller. ICP offers quick and efficient design iterations and eliminates
unnecessary package handling or socketing of devices.
In contrast to the ICP method, in-application programming (IAP) can use any
communication interface supported by the microcontroller (I/Os, USB, CAN, UART, I
2
C, SPI,
etc.) to download programming data into memory. With IAP, the Flash memory can be re-
programmed while the application is running. Nevertheless, part of the application has to
have been previously programmed in the Flash memory using ICP.
The Flash interface implements instruction access and data access based on the AHB
protocol. It implements a prefetch buffer that speeds up CPU code execution. It also
implements the logic necessary to carry out Flash memory operations (program/erase).
Program/erase operations can be performed over the whole product voltage range.
Read/write protections and option bytes are also implemented.
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