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LT1920IN8 用户编程技术手册 - ADI（亚德诺）
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LT1920IN8数据手册
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2
LT1920
ABSOLUTE MAXIMUM RATINGS
W
WW
U
ORDER PART
NUMBER
PACKAGE/ORDER INFORMATION
W
U
U
LT1920CN8
LT1920CS8
LT1920IN8
LT1920IS8
S8 PART MARKING
1920
1920I
1
2
3
4
8
7
6
5
TOP VIEW
R
G
–IN
+IN
–V
S
R
G
+V
S
OUTPUT
REF
N8 PACKAGE
8-LEAD PDIP
S8 PACKAGE
8-LEAD PLASTIC SO
+
–
T
JMAX
= 150°C, θ
JA
= 130°C/ W (N8)
T
JMAX
= 150°C, θ
JA
= 190°C/ W (S8)
(Note 1)
Supply Voltage ...................................................... ±20V
Differential Input Voltage (Within the
Supply Voltage) ..................................................... ±40V
Input Voltage (Equal to Supply Voltage) ................ ±20V
Input Current (Note 3) ........................................ ±20mA
Output Short-Circuit Duration.......................... Indefinite
Operating Temperature Range ................ – 40°C to 85°C
Specified Temperature Range
LT1920C (Note 4).................................... 0°C to 70°C
LT1920I .............................................. – 40°C to 85°C
Storage Temperature Range ................. –65°C to 150°C
Lead Temperature (Soldering, 10 sec).................. 300°C
Consult factory for Military grade parts.
ELECTRICAL CHARACTERISTICS
V
S
= ±15V, V
CM
= 0V, T
A
= 25°C, R
L
= 2k, unless otherwise noted.
SYMBOL PARAMETER CONDITIONS (Note 6) MIN TYP MAX UNITS
G Gain Range G = 1 + (49.4k/R
G
) 1 10k
Gain Error G = 1 0.008 0.1 %
G = 10 (Note 2) 0.010 0.3 %
G = 100 (Note 2) 0.025 0.3 %
G = 1000 (Note 2) 0.040 0.35 %
G/T Gain vs Temperature G < 1000 (Note 2) ● 20 50 ppm/°C
Gain Nonlinearity (Note 5) V
O
= ±10V, G = 1 10 ppm
V
O
= ±10V, G = 10 and 100 10 30 ppm
V
O
= ±10V, G = 100 and 1000 20 ppm
V
OST
Total Input Referred Offset Voltage V
OST
= V
OSI
+ V
OSO
/G
V
OSI
Input Offset Voltage G = 1000, V
S
= ±5V to ±15V 30 125 µV
G = 1000, V
S
= ±5V to ±15V ● 185 µV
V
OSI
/T Input Offset Drift (RTI) (Note 3) ● 1 µV/°C
V
OSO
Output Offset Voltage G = 1, V
S
= ±5V to ±15V 400 1000 µV
G = 1, V
S
= ±5V to ±15V ● 1500 µV
V
OSO
/T Output Offset Drift (Note 3) ● 515µV/°C
I
OS
Input Offset Current 0.3 1 nA
I
B
Input Bias Current 0.5 2 nA
e
n
Input Noise Voltage, RTI 0.1Hz to 10Hz, G = 1 2.00 µV
P-P
0.1Hz to 10Hz, G = 10 0.50 µV
P-P
0.1Hz to 10Hz, G = 100 and 1000 0.28 µV
P-P
Total RTI Noise =
√
e
ni
2
+ (e
no
/G)
2
e
ni
Input Noise Voltage Density, RTI f
O
= 1kHz 7.5 nV/√Hz
e
no
Output Noise Voltage Density, RTI f
O
= 1kHz 67 nV/√Hz
i
n
Input Noise Current f
O
= 0.1Hz to 10Hz 10 pA
P-P
Input Noise Current Density f
O
= 10Hz 124 fA/√Hz
R
IN
Input Resistance V
IN
= ±10V 200 GΩ
C
IN(DIFF)
Differential Input Capacitance f
O
= 100kHz 1.6 pF
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