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Memory organization PM0051
6/27 Doc ID 14614 Rev 3
2 Memory organization
This section describes the memory organization corresponding to:
Access line and performance line STM8S microcontrollers
Medium and high density STM8A microcontrollers
STM8S microcontrollers offer low density (8 Kbytes), medium density (from 16 to
32 Kbytes) and high density (from 32 to 128 Kbytes) Flash program memory, plus data
EEPROM.
STM8A microcontrollers feature medium density (from 8 to 32 Kbytes) and high density
(from 32 to 128 Kbytes) Flash memory, plus data EEPROM.
The memory organization differs from one STM8 family to another. Refer to Section 2.1,
Section 2.2, Section 2.3, Section 2.4, and Section 2.3 for a description of the memory
organization according to microcontroller family and memory density.
A memory accelerator takes advantage of the parallel 4-byte storage, which corresponds to
a word. The Flash program memory and data EEPROM can be erased and programmed at
byte level, word level or block level. In word programming mode, 4 bytes can be
programmed/erased during the same cycle, while in block programming mode, a whole
block is programmed/erase during the same cycle. Refer to Section 2.1, Section 2.2,
Section 2.3, Section 2.4, and Section 2.3 for information on block size according to the
devices.
2.1 Low density STM8S microcontrollers
The memory array is divided into two areas:
8 Kbytes of Flash program memory organized in 128 pages or blocks of 64 bytes each.
The Flash program memory is divided into 2 areas, the user boot code area (UBC),
which size can be configured by option byte, and the main program memory area. The
Flash program memory is mapped in the upper part of the STM8S addressing space
and includes the reset and interrupt vectors.
640 bytes of data EEPROM (DATA) organized in 10 pages or blocks of 64 bytes each.
One block (64 bytes) contains the option bytes of which 11 are used to configure the
device hardware features. The options bytes can be programmed in user, IAP and
ICP/SWIM modes.
Refer to Ta ble 1 for a detailed description of the memory partition for low density STM8S
microcontrollers.

STM8S003K3T6C 数据手册

ST Microelectronics(意法半导体)
103 页 / 1.44 MByte
ST Microelectronics(意法半导体)
467 页 / 9.47 MByte
ST Microelectronics(意法半导体)
27 页 / 0.18 MByte
ST Microelectronics(意法半导体)
104 页 / 1.47 MByte
ST Microelectronics(意法半导体)
43 页 / 0.43 MByte
ST Microelectronics(意法半导体)
24 页 / 1.06 MByte
ST Microelectronics(意法半导体)
16 页 / 0.81 MByte
ST Microelectronics(意法半导体)
5 页 / 0.04 MByte

STM8S003K3T6 数据手册

ST Microelectronics(意法半导体)
STM8S 8 位微控制器,STMicroelectronicsSTM8S 系列通用 8 位闪存微控制器是具有一个 3 级管线的 STM8 的高级芯型号。 STM8S 受益于在 24MHz 在操作高达 20MIPS 的高级芯体系架构。 嵌入式 EEPROM、RC 振荡器和完整的外围设备为设计人员提供坚固且可靠的解决方案。 ### STM8 8 位微控制器,STMicroelectronicsSTM8 平台已应用于高性能 8 位核心且是最先进的外围设备。 8 位微控制器以 16/24MHz 操作,具有高达 128kB 闪存、内部 RAM 和 EEPROM、8/16 位计时器、A/D 转换器、D/A 转换器、比较器、串行接口和可选显示控制器。
ST Microelectronics(意法半导体)
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