Datasheet 搜索 > 双极性晶体管 > ROHM Semiconductor（罗姆半导体） > DTC115EETL 数据手册 > DTC115EETL 开发手册 1/1 页
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DTC115EETL 开发手册 - ROHM Semiconductor（罗姆半导体）
制造商:
ROHM Semiconductor（罗姆半导体）
分类:
双极性晶体管
封装:
SC-75-3
描述:
NPN 100毫安50V数字晶体管（偏置电阻内置晶体管） NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)
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DTC115EETL数据手册
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DTC115GUA / DTC115GKA
Transistors
Digital transistors (built-in resistor)
DTC115GUA / DTC115GKA
!
!!
!Features
1) The built-in bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the input,
and parasitic effects are almost completely eliminated.
2) Only the on / off conditions need to be set for operation,
making device design easy.
3) Higher mounting densities can be achieved.
!
!!
!
Equivalent circuit
C
B
E
R
E : Emitter
C : Collector
B : Base
!
!!
!
Absolute maximum ratings
(Ta=25°C)
Parameter Limits
50
50
5
100
200
150
−55~+150
Unit
V
V
V
mA
mW
°C
°C
Collector-base voltage
Collector-emitter voltag
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
Tj
Tstg
!
!!
!
Package, marking, and packaging specifications
DTC115GUA
UMT3
K29
T106
3000
DTC115GKA
SMT3
K29
T146
3000
Type
Package
Marking
Packaging code
Basic ordering unit (pieces)
!
!!
!External dimensions (Units : mm)
DTC115GUA
ROHM : UMT3
EIAJ : SC-70
DTC115GKA
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
Each lead has same dimensions
1.25
2.1
0.3
0.15
0~0.1
0.1Min.
(
3
)
0.9
0.7
0.2
0.65
(
2
)
2.0
1.3
(
1
)
0.65
Each lead has same dimensions
0.8
0.15
0
~
0.1
0.3Min.
1.1
(
2
)
(
1
)
2.8
1.6
0.4
(
3
)
2.9
1.9
0.95 0.95
!
!!
!
Electrical characteristics
(Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
50
50
5
−
30
−
82
−
70
−
−
−
−
−
−
−
250
100
−
−
−
0.5
58
0.3
−
−
130
V
V
V
µA
µA
V
−
MHz
kΩ
I
C
=50µA
I
C
=1mA
I
E
=72µA
V
CB
=50V
V
EB
=4V
I
C
=5mA, I
B
=0.25mA
I
C
=5mA, V
CE
=5V
V
CE
=10V, I
E
=−5mA, f=100MHz
∗
−
Collector-base breakdown voltage
Collector-emitter breakdown voltag
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
Transition frequency
Emitter-base resistance
∗
Trans
ition frequency of the device.
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
R
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