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DRV8842EVM 数据手册 - TI（德州仪器）
制造商:
TI（德州仪器）
分类:
开发套件
描述:
TEXAS INSTRUMENTS DRV8842EVM 评估模块, DRV8842EVM
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
引脚图在P3P4P10Hot
典型应用电路图在P13P14
原理图在P1P8P13
封装尺寸在P20P22P23
标记信息在P20
封装信息在P19P20P21P22P23
技术参数、封装参数在P4
应用领域在P1P21P27
电气规格在P5P6
导航目录
DRV8842EVM数据手册
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5
DRV8842
www.ti.com
SLVSAB8G –MAY 2010–REVISED MARCH 2016
Product Folder Links: DRV8842
Submit Documentation FeedbackCopyright © 2010–2016, Texas Instruments Incorporated
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
6.4 Thermal Information
THERMAL METRIC
(1)
DRV8842
UNITPWP (HTSSOP)
28 PINS
R
θJA
Junction-to-ambient thermal resistance 31.6 °C/W
R
θJC(top)
Junction-to-case (top) thermal resistance 15.9 °C/W
R
θJB
Junction-to-board thermal resistance 5.6 °C/W
ψ
JT
Junction-to-top characterization parameter 0.2 °C/W
ψ
JB
Junction-to-board characterization parameter 5.5 °C/W
R
θJC(bot)
Junction-to-case (bottom) thermal resistance 1.4 °C/W
6.5 Electrical Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER SUPPLIES
I
VM
VM operating supply current V
M
= 24 V, f
PWM
< 50 kHz 5 8 mA
I
VMQ
VM sleep mode supply current V
M
= 24 V 10 20 μA
V
UVLO
VM undervoltage lockout voltage V
M
rising 7.8 8.2 V
V3P3OUT REGULATOR
V
3P3
V3P3OUT voltage IOUT = 0 mA to 1 mA 3.2 3.3 3.4 V
LOGIC-LEVEL INPUTS
V
IL
Input low voltage 0.6 0.7 V
V
IH
Input high voltage 2.2 5.25 V
V
HYS
Input hysteresis 0.3 0.45 0.6 V
I
IL
Input low current VIN = 0 –20 20 μA
I
IH
Input high current VIN = 3.3 V 33 100 μA
R
PD
Internal pulldown resistance 100 kΩ
nFAULT OUTPUT (OPEN-DRAIN OUTPUT)
V
OL
Output low voltage I
O
= 5 mA 0.5 V
I
OH
Output high leakage current V
O
= 3.3 V 1 μA
DECAY INPUT
V
IL
Input low threshold voltage For slow decay (brake) mode 0 0.8 V
V
IH
Input high threshold voltage For fast decay (coast) mode 2 V
I
IN
Input current ±40 μA
R
PU
Internal pullup resistance (to 3.3 V) 130 kΩ
R
PD
Internal pulldown resistance 80 kΩ
H-BRIDGE FETS
R
DS(ON)
HS FET on resistance
V
M
= 24 V, I
O
= 1 A, T
J
= 25°C 0.1
Ω
V
M
= 24 V, I
O
= 1 A, T
J
= 85°C 0.13 0.16
R
DS(ON)
LS FET on resistance
V
M
= 24 V, I
O
= 1 A, T
J
= 25°C 0.1
Ω
V
M
= 24 V, I
O
= 1 A, T
J
= 85°C 0.13 0.16
I
OFF
Off-state leakage current –40 40 μA
MOTOR DRIVER
f
PWM
Internal current control PWM frequency 50 kHz
t
BLANK
Current sense blanking time 3.75 μs
t
R
Rise time 30 200 ns
t
F
Fall time 30 200 ns
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