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IXGR60N60C3D1 数据手册 - IXYS Semiconductor
制造商:
IXYS Semiconductor
分类:
IGBT晶体管
封装:
ISOPLUS-247
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IXGR60N60C3D1数据手册
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Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
V
GE(th)
I
C
= 250μA, V
CE
= V
GE
3.0 5.5 V
I
CES
V
CE
= V
CES
, V
GE
= 0V 50 μA
T
J
= 125°C 1 mA
I
GES
V
CE
= 0V, V
GE
= ±20V ±100 nA
V
CE(sat)
I
C
= 40A, V
GE
= 15V, Note 1 2.2 2.5 V
T
J
= 125°C 1.7 V
Symbol Test Conditions Maximum Ratings
V
CES
T
J
= 25°C to 150°C 600 V
V
CGR
T
J
= 25°C to 150°C, R
GE
= 1MΩ 600 V
V
GES
Continuous ±20 V
V
GEM
Transient ±30 V
I
C25
T
C
= 25°C ( Limited by Leads) 75 A
I
C110
T
C
= 110°C30A
I
F110
T
C
= 110°C17A
I
CM
T
C
= 25°C, 1ms 260 A
I
A
T
C
= 25°C40A
E
AS
T
C
= 25°C 400 mJ
SSOA V
GE
= 15V, T
VJ
= 125°C, R
G
= 3Ω I
CM
= 125 A
(RBSOA) Clamped Inductive Load V
CE
≤ V
CES
P
C
T
C
= 25°C 170 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
V
ISOL
50/60 Hz, RMS, t = 1minute 2500 V~
I
ISOL
< 1mA t = 10 s 3000 V~
F
C
Mounting Force 20..120/4.5..27 N/lb
T
L
Maximum Lead Temperature for Soldering 300 °C
T
SOLD
1.6mm (0.062 in.) from Case for 10s 260 °C
Weight 5 g
DS100055B(01/10)
V
CES
= 600V
I
C110
= 30A
V
CE(sat)
≤≤
≤≤
≤£ 2.5V
t
fi(typ)
= 50ns
IXGR60N60C3D1
High Speed PT IGBT for
40-100 kHz Switching
Features
z
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
z
Isolated Mounting Surface
z
2500V Electrical Isolation
z
Optimized for Low Switching Losses
z
Square RBSOA
z
Avalanche Rated
z
Anti-Parallel Ultra Fast Diode
Advantages
z
High Power Density
z
Low Gate Drive Requirement
Applications
z
High Frequency Power Inverters
z
UPS
z
Motor Drives
z
SMPS
z
PFC Circuits
z
Battery Chargers
z
Welding Machines
z
Lamp Ballasts
GenX3
TM
600V IGBT
w/ Diode
(Electrically Isolated Back Surface)
ISOPLUS247
TM
G = Gate C = Collector
E = Emitter
G
C
E
Isolated Tab
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