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IXGR60N60C3D1 数据手册 - IXYS Semiconductor
制造商:
IXYS Semiconductor
分类:
IGBT晶体管
封装:
ISOPLUS-247
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IXGR60N60C3D1数据手册
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IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGR60N60C3D1
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
g
fs
I
C
= 40A, V
CE
= 10V, Note 1 23 38 S
C
ies
2810 pF
C
oes
V
CE
= 25V, V
GE
= 0V, f = 1MHz 230 pF
C
res
80 pF
Q
g
115 nC
Q
ge
I
C
= 50A, V
GE
= 15V, V
CE
= 0.5 • V
CES
22 nC
Q
gc
43 nC
t
d(on)
21 ns
t
ri
33 ns
E
on
0.80 mJ
t
d(off)
70 110 ns
t
fi
50 ns
E
off
0.45 0.80 mJ
t
d(on)
21 ns
t
ri
33 ns
E
on
1.25 mJ
t
d(off)
112 ns
t
fi
86 ns
E
off
0.80 mJ
R
thJC
0.73 °C/W
R
thCS
0.15 °C/W
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
V
F
I
F
= 30A, V
GE
= 0V, Note 1 2.8 V
T
J
= 150°C 1.6 V
I
RM
I
F
= 30A, V
GE
= 0V, T
J
= 100°C 4 A
-di
F
/dt = 100A/μs, V
R
= 100V 100 ns
t
rr
I
F
= 1A, -di/dt = 100A/μs, V
R
= 30V 25 ns
R
thJC
1.5 °C/W
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
ISOPLUS247 (IXGR) Outline
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher V
CE
(Clamp), T
J
or R
G
.
Inductive Load, T
J
= 125°C
I
C
= 40A, V
GE
= 15V
V
CE
= 480V, R
G
= 3Ω
Note 2
Inductive Load, T
J
= 25°C
I
C
= 40A, V
GE
= 15V
V
CE
= 480V, R
G
= 3Ω
Note 2
Reverse Diode (FRED)
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