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UCC37322P
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UCC37322P数据手册
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UCC27321 , UCC27322
UCC37321, UCC37322
SLUS504G SEPTEMBER 2002REVISED MAY 2013
www.ti.com
DESCRIPTION (CONTINUED)
Using a design that inherently minimizes shoot-through current, the outputs of these can provide high gate drive
current where it is most needed at the Miller plateau region during the MOSFET switching transition. A unique
hybrid output stage paralleling bipolar and MOSFET transistors (TrueDrive) allows efficient current delivery at low
supply voltages.With this drive architecture, UCC37321/2/3 can be used in industry standard 6-A, 9-A and many
12-A driver applications. Latch up and ESD protection circuitries are also included. Finally, the UCC37321/2
provides an enable (ENBL) function to have better control of the operation of the driver applications. ENBL is
implemented on pin 3 which was previously left unused in the industry standard pin-out. It is internally pulled up
to Vdd for active high logic and can be left open for standard operation.
In addition to SOIC-8 (D) and PDIP-8 (P) package offerings, the UCC37321/2 also comes in the thermally
enhanced but tiny 8-pin MSOP PowerPAD™ (DGN) package. The PowerPAD™ package drastically lowers the
thermal resistance to extend the temperature operation range and improve the long-term reliability.
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range (unless otherwise noted)
(1)(2)
UCCx732x UNIT
Supply voltage, V
DD
-–0.3 to 16 V
Output current (OUT) DC, I
OUT_DC
0.6 A
–0.3 V to 6 V or V
DD
+0.3
Input voltage (IN), V
IN
(whichever is larger)
V
–0.3 V to 6 V or V
DD
+0.3
Enable voltage (ENBL)
(whichever is larger)
D package 650 mW
Power dissipation at T
A
= 25°C DGN package 3 W
P package 350 mW
Junction operating temperature, T
J
–55 to 150 °C
Storage temperature, T
stg
–65 to 150 °C
Lead temperature (soldering, 10 sec.) 300 °C
(1) Stresses beyond those listed under absolute maximum ratings” may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating
conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to GND. Currents are positive into, negative out of the specified terminal.
ORDERING INFORMATION
PACKAGED DEVICES
OUTPUT TEMPERATURE
MSOP-8 PowerPAD
CONFIGURATION RANGE T
A
= T
J
SOIC-8 (D)
(1)
PDIP-8 (P)
(DGN)
(1)
–40°C to +105°C UCC27321D UCC27321DGN UCC27321P
Inverting
0°C to +70°C UCC37321D UCC37321DGN UCC37321P
–40°C to +105°C UCC27322D UCC27322DGN UCC27322P
NonInverting
0°C to +70°C UCC37322D UCC37322DGN UCC37322P
(1) D (SOIC–8) and DGN (PowerPAD–MSOP) packages are available taped and reeled. Add R suffix to device type (e.g. UCC37321DR,
UCC37322DGNR) to order quantities of 2,500 devices per reel.
2 Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated
Product Folder Links: UCC27321 UCC27322 UCC37321 UCC37322

UCC37322P 数据手册

TI(德州仪器)
31 页 / 1.34 MByte
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UCC37322 数据手册

TI(德州仪器)
启用型单 9A 高速低侧 MOSFET 驱动器
TI(德州仪器)
TEXAS INSTRUMENTS  UCC37322P  芯片, MOSFET, 低压侧, 4V-15V电源, 9A输出, 35ns延迟, DIP-8
TI(德州仪器)
TEXAS INSTRUMENTS  UCC37322D  芯片, MOSFET, 低压侧, 4V-15V电源, 9A输出, 35ns延迟, SOIC-8
TI(德州仪器)
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TI(德州仪器)
单9 ,高速低侧MOSFET驱动器与启用 SINGLE 9-A HIGH SPEED LOW- SIDE MOSFET DRIVER WITH ENABLE
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单9A高速低侧MOSFET驱动器与启用 SINGLE 9-A HIGH SPEED LOW-SIDE MOSFET DRIVER WITH ENABLE
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单9A高速低侧MOSFET驱动器与启用 SINGLE 9-A HIGH SPEED LOW-SIDE MOSFET DRIVER WITH ENABLE
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