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2N4264 其他数据使用手册 - ON Semiconductor（安森美）
制造商:
ON Semiconductor（安森美）
分类:
双极性晶体管
封装:
TO-92
描述:
通用晶体管（ NPN硅） General Purpose Transistor(NPN Silicon)
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2N4264数据手册
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of 6 Go
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1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
15 Vdc
Collector–Base Voltage V
CBO
30 Vdc
Emitter–Base Voltage V
EBO
6.0 Vdc
Collector Current — Continuous I
C
200 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
350
2.8
mW
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
1.0
8.0
Watts
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
q
JA
357 °C/W
Thermal Resistance, Junction to Case R
q
JC
125 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 1.0 mAdc, I
B
= 0)
V
(BR)CEO
15 —
Vdc
Collector–Base Breakdown Voltage
(I
C
= 10
m
Adc, I
E
= 0)
V
(BR)CBO
30 —
Vdc
Emitter–Base Breakdown Voltage
(I
E
= 10
m
Adc, I
C
= 0)
V
(BR)EBO
6.0 —
Vdc
Base Cutoff Current
(V
CE
= 12 Vdc, V
EB(off)
= 0.25 Vdc)
(V
CE
= 12 Vdc, V
EB(off)
= 0.25 Vdc, T
A
= 100°C)
I
BEV
—
—
0.1
10
µAdc
Collector Cutoff Current
(V
CE
= 12 Vdc, V
EB(off)
= 0.25 Vdc)
I
CEX
— 100
nAdc
Order this document
by 2N4264/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
2
3
Motorola, Inc. 1997
COLLECTOR
3
2
BASE
1
EMITTER
REV 2
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