Datasheet 搜索 > 负载控制器 > Diodes（美台） > AP2191DMPG-13 数据手册 > AP2191DMPG-13 其他数据使用手册 4/19 页
器件3D模型￥ 1.07
AP2191DMPG-13 其他数据使用手册 - Diodes（美台）
制造商:
Diodes（美台）
分类:
负载控制器
封装:
MSOP-8
描述:
功率电子开关 AP2191DMPG-13 MSOP-8-EP
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
引脚图在P1P2Hot
典型应用电路图在P2
原理图在P3
封装尺寸在P13P14P15
焊盘布局在P11P16P17
型号编码规则在P11
标记信息在P11P12P13
封装信息在P11
技术参数、封装参数在P3
应用领域在P1P10
电气规格在P4P5P6P7P8
导航目录
AP2191DMPG-13数据手册
Page:
of 19 Go
若手册格式错乱，请下载阅览PDF原文件
AP2181D/AP2191D
1.5A SINGLE CHANNEL CURRENT-LIMITED POWER
SWITCH WITH OUTPUT DISCHARGE
AP2181D/2191D
Document number: DS32251 Rev. 2 - 2
4 of 19
www.diodes.com
June 2012
© Diodes Incorporated
NEW PRODUCT
Electrical Characteristics (T
A
= 25
o
C, V
IN
= +5.0V, unless otherwise stated)
Symbol Parameter Test Conditions Min Typ. Max Unit
V
UVLO
Input UVLO 1.6 1.9 2.5 V
I
SHDN
Input Shutdown Current Disabled, I
OUT
= 0 0.5 1
μA
I
Q
Input Quiescent Current Enabled, I
OUT
= 0 45 70
μA
I
LEAK
Input Leakage Current Disabled, OUT grounded 0.1 1
μA
I
REV
Reverse Leakage Current Disabled, V
IN
= 0V, V
OUT
= 5V, I
REV
at V
IN
0.1 1
μA
R
DS(ON)
Switch on-resistance
V
IN
= 5V,
I
OUT
= 1.5A
T
A
= 25°C
SOT25, MSOP-8,
MSOP-8-EP, SO-8
95 115
m
DFN2018-6 90 110
-40°C T
A
85°C
140
V
IN
= 3.3V,
I
OUT
= 1.5A
T
A
= 25°C
120 140
-40°C T
A
85°C
170
I
SHORT
Short-Circuit Current Limit
Enabled into short circuit, C
L
=120μF
2.0 A
I
LIMIT
Over-Load Current Limit
V
IN
= 5V, V
OUT
= 4V, C
L
=120μF, -40°C T
A
85°C
1.6 2.1 2.6 A
I
Trig
Current limiting trigger threshold
Output Current Slew rate (<100A/s) , C
L
=120μF
2.6 A
V
IL
EN Input Logic Low Voltage V
IN
= 2.7V to 5.5V 0.8 V
V
IH
EN Input Logic High Voltage V
IN
= 2.7V to 5.5V 2 V
I
SINK
EN Input leakage V
EN
= 5V 1
μA
T
D(ON)
Output turn-on delay time
C
L
=1μF, R
load
=10
0.05 ms
T
R
Output turn-on rise time
C
L
=1μF, R
load
=10
0.6 1.5 ms
T
D(OFF)
Output turn-off delay time
C
L
=1μF, R
load
=10
0.05 ms
T
F
Output turn-off fall time
C
L
=1μF, R
load
=10
0.05 0.1 ms
R
FLG
FLG output FET on-resistance I
FLG
=10mA 20 40
T
Blank
FLG blanking time
C
IN
=10uF, C
L
=22μF
4 7 15 ms
T
DIS
Discharge time
C
L
= 1μF, V
IN
= 5V, disabled to V
OUT
< 0.5V
0.6 ms
R
DIS
Discharge resistance (Note 3) V
IN
= 5V, disabled, I
OUT
= 1mA 100
T
SHDN
Thermal Shutdown Threshold Enabled, R
load
=1k 140
°C
T
HYS
Thermal Shutdown Hysteresis 25
°C
JA
Thermal Resistance Junction-to-
Ambient
SOT25 (Note 4) 170
o
C/W
SO-8 (Note 4) 127
MSOP-8 (Note 4) 118
MSOP-8EP (Note 5) 67
U-DFN2018-6 (Note 5) 70
Notes: 3. The discharge function is active when the device is disabled (when enable is de-asserted). The discharge function offers a resistive discharge path
for the external storage capacitor.
4. Device mounted on FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout.
5. Device mounted on 2” x 2” FR-4 substrate PCB, 2oz copper, with minimum recommended pad on top layer and thermal vias to bottom layer ground
plane.
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