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AP6502ASP-13 产品封装文件 - Diodes Zetex（捷特科）
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Diodes Zetex（捷特科）
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电源管理
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SOIC
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Diodes IncDiodesZetez 的一系列降压电压开关调节器适用于各种要求。### 开关电压调节器，Diodes Inc
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AP6502ASP-13数据手册
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ZXTP23015CFH
Issue 2 - May 2007 4 www.zetex.com
© Zetex Semiconductors plc 2007
ELECTRICAL CHARACTERISTICS (at T
AMB
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage V
(BR)CBO
-15 -40 V I
C
=-100A
Collector-emitter breakdown
voltage
V
(BR)CES
-15 -40 V I
C
=-100A
Collector-emitter breakdown
voltage
V
(BR)CEO
-15 -25 V
I
C
=-10mA
(*)
Emitter-base breakdown voltage V
(BR)EBO
-7.0 -8.2 V I
E
=-100A
Emitter-collector breakdown
voltage
V
(BR)ECO
-6.0 -8.5 V I
E
=-100A
Collector-emitter cut-off current I
CES
-20 nA V
CE
=-12V
Collector-base cut-off current I
CBO
-20 nA V
CB
=-12V
Emitter-base cut-off current I
EBO
-10 nA V
EB
=-6V
Static forward current transfer
ratio
H
FE
200 380
I
C
=-10mA, V
CE
=-2V
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width = 300S. Duty cycle ⱕ2%.
200 350 560 I
C
=-500mA, V
CE
=-2V
140 220 Ic=-6A, V
CE
=-2V
Collector-emitter saturation
voltage
V
CE(sat)
-6 -10 mV
I
C
=-100mA, I
B
=-10mA
(*)
-27 -36 mV
I
C
=-1A, I
B
=-100mA
(*)
-90 -120 mV
I
C
=-3A, I
B
=-60mA
(*)
-140 -190 mV
I
C
=-6A, I
B
=-240mA
(*)
Base-emitter saturation voltage V
BE(sat)
-0.83 -0.93 V
I
C
=-3A, I
B
=-60mA
(*)
-0.93 -1.03 V
I
C
=-6A, I
B
=-240mA
(*)
Base-emitter turn-on voltage V
BE(on)
-0.83 -0.93 V
I
C
=-6A, V
CE
=-2V
(*)
Transition frequency f
T
270 MHz Ic=-500mA, V
CE
=-2V,
f=50MHz
Output capacitance C
obo
78.4 pF V
CB
=-10V, f=1MHz
Delay time t
(d)
16 ns V
CC
=-5V, I
C
=-3A,
I
B1
=I
B2
=-150mA
Rise time t
(r)
13 ns
Storage time t
(stg)
123 ns
Fall time t
(f)
9ns
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