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BAS21SLT1G 产品手册 - ON Semiconductor（安森美）
制造商:
ON Semiconductor（安森美）
分类:
二极管阵列
封装:
SOT-23-3
描述:
ON SEMICONDUCTOR BAS21SLT1G. 小信号二极管
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BAS21SLT1G数据手册
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若手册格式错乱，请下载阅览PDF原文件
© Semiconductor Components Industries, LLC, 2007
October, 2007 - Rev. 0
1 Publication Order Number:
BAS21AHT1/D
BAS21AHT1G
Preferred Device
Low Leakage
Switching Diode
Features
•This is a Pb-Free Device
MAXIMUM RATINGS
Symbol Rating Value Unit
V
R
Continuous Reverse Voltage 250 Vdc
V
RRM
Repetitive Peak Reverse Voltage 250 Vdc
I
F
Peak Forward Current 200 mAdc
I
FM(surge)
Peak Forward Surge Current 625 mAdc
THERMAL CHARACTERISTICS
Symbol Characteristic Max Unit
P
D
Total Device Dissipation FR-5 Board,
(Note 1) T
A
= 25°C
Derate above 25°C
200
1.57
mW
mW/°C
R
q
JA
Thermal Resistance,
Junction-to-Ambient
635 °C/W
T
J
, T
stg
Junction and Storage Temperature
Range
-55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR-5 Minimum Pad
LOW LEAKAGE
SWITCHING DIODE
Device Package Shipping
†
ORDERING INFORMATION
SOD-323
CASE 477
STYLE 1
Preferred devices are recommended choices for future use
and best overall value.
1
CATHODE
2
ANODE
http://onsemi.com
MARKING
DIAGRAM
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
BAS21AHT1G SOD-323
(Pb-Free)
3000/Tape & Reel
AA MG
G
1
2
AA = Device Code
M = Date Code*
G = Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
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