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CSD18532KCS 其他数据使用手册 - TI(德州仪器)
制造商:
TI(德州仪器)
分类:
MOS管
封装:
TO-220-3
描述:
60V N 通道 NexFET™ 功率 MOSFET
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CSD18532KCS数据手册
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0
2
4
6
8
10
12
0 2 4 6 8 10 12 14 16 18 20
V
GS
- Gate-to- Source Voltage (V)
R
DS(on)
- On-State Resistance (mΩ)
T
C
= 25°C Id = 100A
T
C
= 125ºC Id = 100A
G001
0
2
4
6
8
10
0 5 10 15 20 25 30 35 40 45 50
Q
g
- Gate Charge (nC)
V
GS
- Gate-to-Source Voltage (V)
I
D
= 100A
V
DS
= 30V
G001
CSD18532KCS
www.ti.com
SLPS361A –AUGUST 2012–REVISED OCTOBER 2012
60-V, N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD18532KCS
1
FEATURES
PRODUCT SUMMARY
2
• Ultra Low Qg and Qgd
T
A
= 25°C TYPICAL VALUE UNIT
• Low Thermal Resistance
V
DS
Drain to Source Voltage 60 V
• Avalanche Rated
Q
g
Gate Charge Total (10V) 44 nC
Q
gd
Gate Charge Gate to Drain 6.9 nC
• Logic Level
V
GS
= 4.5V 4.2 mΩ
• Pb Free Terminal Plating
R
DS(on)
Drain to Source On Resistance
V
GS
= 10V 3.3 mΩ
• RoHS Compliant
V
GS(th)
Threshold Voltage 1.8 V
• Halogen Free
• TO-220 Plastic Package
ORDERING INFORMATION
Device Package Media Qty Ship
APPLICATIONS
TO-220 Plastic
CSD18532KCS Tube 50 Tube
Package
• DC-DC Conversion
• Secondary Side Synchronous Rectifier
ABSOLUTE MAXIMUM RATINGS
• Motor Control
T
A
= 25°C VALUE UNIT
V
DS
Drain to Source Voltage 60 V
DESCRIPTION
V
GS
Gate to Source Voltage ±20 V
The NexFET™ power MOSFET has been designed
Continuous Drain Current (Package limited),
100
to minimize losses in power conversion applications.
T
C
= 25°C
Continuous Drain Current (Silicon limited),
I
D
169 A
T
C
= 25°C
Figure 1. Top View
Continuous Drain Current (Silicon limited),
107
T
C
= 100°C
I
DM
Pulsed Drain Current
(1)
179 A
P
D
Power Dissipation 216 W
T
J
, Operating Junction and Storage
–55 to 150 °C
T
STG
Temperature Range
Avalanche Energy, single pulse
E
AS
281 mJ
I
D
= 75A, L = 0.1mH, R
G
= 25Ω
(1) Pulse duration ≤300μs, duty cycle ≤2%
R
DS(on)
vs V
GS
GATE CHARGE
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2NexFET is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Copyright © 2012, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
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