Datasheet 搜索 > MOS管 > TI（德州仪器） > CSD18532NQ5B 数据手册 > CSD18532NQ5B 其他数据使用手册 1/15 页
￥ 10.217
CSD18532NQ5B 其他数据使用手册 - TI（德州仪器）
制造商:
TI（德州仪器）
分类:
MOS管
封装:
VSON-Clip-8
描述:
60V N 通道 NexFET 功率 MOSFET，CSD18532NQ5B
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
导航目录
CSD18532NQ5B数据手册
Page:
of 15 Go
若手册格式错乱，请下载阅览PDF原文件
V
GS
- Gate-to-Source Voltage (V)
R
DS(on)
- On-State Resistance (m:)
0 2 4 6 8 10 12 14 16 18 20
0
2
4
6
8
10
12
14
D007
T
C
= 25°C, I
D
= 25 A
T
C
= 125°C, I
D
= 25 A
Q
g
- Gate Charge (nC)
V
GS
- Gate-to-Source Voltage (V)
0 5 10 15 20 25 30 35 40 45 50
0
1
2
3
4
5
6
7
8
9
10
D004
I
D
= 25 A
V
DS
= 30 V
1
D
2
D
3
D
4
D
D
5
G
6S
7
S
8S
P0093-01
Product
Folder
Sample &
Buy
Technical
Documents
Tools &
Software
Support &
Community
CSD18532NQ5B
SLPS440A –JUNE 2013–REVISED DECEMBER 2015
CSD18532NQ5B 60 V N-Channel NexFET™ Power MOSFET
1 Features
Product Summary
1
• Ultra-Low Q
g
and Q
gd
T
A
= 25°C TYPICAL VALUE UNIT
• Low Thermal Resistance
V
DS
Drain-to-Source Voltage 60 V
• Avalanche Rated
Q
g
Gate Charge Total (10 V) 49 nC
Q
gd
Gate Charge Gate to Drain 7.9 nC
• Pb Free Terminal Plating
V
GS
= 6 V 3.5 mΩ
• RoHS Compliant
R
DS(on)
Drain-to-Source On-Resistance
V
GS
= 10 V 2.7 mΩ
• Halogen Free
V
GS(th)
Threshold Voltage 2.8 V
• SON 5 mm × 6 mm Plastic Package
Ordering Information
2 Applications
DEVICE QTY MEDIA PACKAGE SHIP
• DC-DC Conversion
CSD18532NQ5B 2500 13-Inch Reel
SON 5 mm × 6 mm Tape and
Plastic Package Reel
• Secondary Side Synchronous Rectifier
CSD18532NQ5BT 250 7-Inch Reel
• Isolated Converter Primary Side Switch
Absolute Maximum Ratings
• Motor Control
T
A
= 25°C VALUE UNIT
V
DS
Drain to Source Voltage 60 V
3 Description
V
GS
Gate to Source Voltage ±20 V
This 60 V, 2.7 mΩ, 5 × 6 mm SON NexFET™ power
Continuous Drain Current (Package limited) 100
MOSFET has been designed to minimize losses in
power conversion applications.
Continuous Drain Current (Silicon limited),
I
D
151 A
T
C
= 25°C
Continuous Drain Current
(1)
21
Top View
I
DM
Pulsed Drain Current
(2)
400 A
Power Dissipation
(1)
3.1
P
D
W
Power Dissipation, T
C
= 25°C 156
T
J
, Operating Junction Temperature,
–55 to 150 °C
T
stg
Storage Temperature
Avalanche Energy, single pulse
E
AS
360 mJ
I
D
= 85 A, L = 0.1 mH, R
G
= 25 Ω
(1) Typical R
θJA
= 40°C/W on a 1 inch
2
, 2 oz. Cu pad on a 0.06
inch thick FR4 PCB.
(2) Max R
θJC
= 0.8°C/W, Pulse duration ≤100 μs, duty cycle ≤1%.
R
DS(on)
vs V
GS
Gate Charge
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
器件 Datasheet 文档搜索
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册，每天更新 5,000 多个 PDF 文件
