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CSD18532NQ5B 其他数据使用手册 - TI（德州仪器）
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TI（德州仪器）
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MOS管
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VSON-Clip-8
描述:
60V N 通道 NexFET 功率 MOSFET，CSD18532NQ5B
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CSD18532NQ5B数据手册
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T
C
- Case Temperature (°C)
I
DS
- Drain-to-Source Current (A)
-50 -25 0 25 50 75 100 125 150 175
0
20
40
60
80
100
120
D012
V
DS
- Drain-to-Source Voltage (V)
I
DS
- Drain-to-Source Current (A)
0.1 1 10 100
0.1
1
10
100
1000
D010
DC
10 ms
1 ms
100 µs
10 µs
T
AV
- Time in Avalanche (ms)
I
AV
- Peak Avalanche Current (A)
0.01 0.1 1
10
100
300300
D011
T
C
= 25q C
T
C
= 125q C
T
C
- Case Temperature (°C)
Normalized On-State Resistance
-75 -50 -25 0 25 50 75 100 125 150 175
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
D008
V
GS
= 6 V
V
GS
= 10 V
V
SD
- Source-to-Drain Voltage (V)
I
SD
- Source-to-Drain Current (A)
0 0.2 0.4 0.6 0.8 1
0.0001
0.001
0.01
0.1
1
10
100
D009
T
C
= 25°C
T
C
= 125°C
CSD18532NQ5B
SLPS440A –JUNE 2013–REVISED DECEMBER 2015
www.ti.com
Typical MOSFET Characteristics (continued)
(T
A
= 25°C unless otherwise stated)
I
D
= 25 A
Figure 8. Normalized On-State Resistance vs Temperature Figure 9. Typical Diode Forward Voltage
Single Pulse, Max R
θJC
= 0.8°C/W
Figure 10. Maximum Safe Operating Area Figure 11. Single Pulse Unclamped Inductive Switching
Figure 12. Maximum Drain Current vs Temperature
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