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器件3D模型￥ 1.229
CSD25402Q3A 其他数据使用手册 - TI（德州仪器）
制造商:
TI（德州仪器）
分类:
MOS管
封装:
VSON-8
描述:
TEXAS INSTRUMENTS CSD25402Q3A 晶体管, MOSFET, P沟道, -35 A, -20 V, 0.0077 ohm, -4.5 V, 900 mV
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
引脚图在P3P4Hot
典型应用电路图在P14
原理图在P12
封装尺寸在P21P22P24P25P26
标记信息在P21P22
封装信息在P21P22P23P24P25P26
技术参数、封装参数在P4
电气规格在P4P6
导航目录
CSD25402Q3A数据手册
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若手册格式错乱，请下载阅览PDF原文件
5
LM25101
www.ti.com.cn
ZHCSFK2C –JULY 2012–REVISED SEPTEMBER 2016
Copyright © 2012–2016, Texas Instruments Incorporated
(1) The Human Body Model (HBM) is a 100-pF capacitor discharged through a 1.5-kΩ resistor into each pin.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.2 ESD Ratings
VALUE UNIT
V
(ESD)
Electrostatic discharge
Human-body model (HBM), per
ANSI/ESDA/JEDEC JS-001
(1)
All pins except 2, 3, and 4 ±2000
V
Pins 2, 3, and 4 ±1000
Charged-device model (CDM), per JEDEC specification JESD22-C101
(2)
±250
Machine model (MM) ±100
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
V
DD
Supply voltage VDD 9 14 V
V
HS
Voltage HS –1 100 – V
DD
V
V
HB
Voltage HB V
HS
+ 8 V
HS
+ 14 V
HS slew rate 50 V/ns
T
J
Junction temperature –40 125 °C
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
7.4 Thermal Information
THERMAL METRIC
(1)
LM25101A, LM25101B LM25101C
UNITD (SOIC)
DDA (SO
PowerPAD)
NGT
(WSON)
DPR
(WSON)
D (SOIC)
DPR
(WSON)
DGN (MSOP
PowerPAD)
8 PINS 8 PINS 8 PINS 10 PINS 8 PINS 10 PINS 8 PINS
R
θJA
Junction-to-ambient thermal
resistance
108.2 46.1 38.2 37.8 111.5 39.8 54.1 °C/W
R
θJC(top)
Junction-to-case (top) thermal
resistance
50.6 53.5 36.3 35.8 54.2 39.1 55.9 °C/W
R
θJB
Junction-to-board thermal resistance 49.1 13.8 15.2 15.0 52.3 17.1 15.1 °C/W
ψ
JT
Junction-to-top characterization
parameter
7.6 4.2 0.3 0.3 9.0 0.4 2.4 °C/W
ψ
JB
Junction-to-board characterization
parameter
48.5 13.9 15.4 15.3 51.7 17.3 15.1 °C/W
R
θJC(bot)
Junction-to-case (bottom) thermal
resistance
— 3.9 4.5 4.4 — 6.1 4.6 °C/W
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