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CSD25402Q3A
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CSD25402Q3A数据手册
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6
LM25101
ZHCSFK2C JULY 2012REVISED SEPTEMBER 2016
www.ti.com.cn
Copyright © 2012–2016, Texas Instruments Incorporated
(1) Minimum and maximum limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through
correlation using Statistical Quality Control (SQC) methods. Limits are used to calculate Average Outgoing Quality Level (AOQL).
7.5 Electrical Characteristics
Typical values apply for T
J
= 25°C only. Minimum and maximum limits apply for T
J
= –40°C to 125°C.
(1)
Unless otherwise
specified, V
DD
= V
HB
= 12 V, V
SS
= V
HS
= 0 V, No Load on LO or HO.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY CURRENTS
I
DD
VDD quiescent current V
LI
= V
HI
= 0 V 0.25 0.4 mA
I
DDO
VDD operating current f = 500 kHz 2.0 3 mA
I
HB
Total HB quiescent current V
LI
= V
HI
= 0 V 0.06 0.2 mA
I
HBO
Total HB operating current f = 500 kHz 1.6 3 mA
I
HBS
HB to VSS current (quiescent) V
HS
= V
HB
= 100 V 0.1 10 µA
I
HBSO
HB to VSS current (operating) f = 500 kHz 0.4 mA
INPUT PINS
V
IL
Input voltage threshold Rising Edge 1.3 1.8 2.3 V
V
IHYS
Input voltage hysteresis 50 mV
R
I
Input pulldown resistance 100 200 400 k
UNDER VOLTAGE PROTECTION
V
DDR
VDD rising threshold 6.0 6.9 7.4 V
V
DDH
VDD threshold hysteresis 0.5 V
V
HBR
HB rising threshold 5.7 6.6 7.1 V
V
HBH
HB threshold hysteresis 0.4 V
BOOT STRAP DIODE
V
DL
Low-current forward voltage I
VDD-HB
= 100 µA 0.52 0.85 V
V
DH
High-current forward voltage I
VDD-HB
= 100 mA 0.8 1 V
RD Dynamic resistance I
VDD-HB
= 100 mA 1.0 1.65
LO AND HO GATE DRIVER
V
OL
Low-level output voltage I
HO
= I
LO
= 100 mA
A version 0.12 0.25
VB version 0.16 0.4
C version 0.28 0.65
V
OH
High-level output voltage
I
HO
= I
LO
= 100 mA
V
OH
= V
DD
V
LO
or
V
OH
= V
HB
V
HO
A version 0.24 0.45
VB version 0.28 0.60
C version 0.60 1.10
I
OHL
Peak pullup current HO, V
LO
= 0 V
A version 3
AB version 2
C version 1
I
OLL
Peak pulldown current HO, V
LO
= 12 V
A version 3
AB version 2
C version 1

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CSD25402Q3 数据手册

TI(德州仪器)
TEXAS INSTRUMENTS  CSD25402Q3A  晶体管, MOSFET, P沟道, -35 A, -20 V, 0.0077 ohm, -4.5 V, 900 mV
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