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CSD87355Q5DT 其他数据使用手册 - TI（德州仪器）
制造商:
TI（德州仪器）
分类:
晶体管
封装:
LSON-CLIP-8
描述:
30V、N 沟道同步降压 NexFET MOSFET™、SON5x6 电源块、45A 8-LSON-CLIP -55 to 150
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CSD87355Q5DT数据手册
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HD
HG
LG
LD
M0190-01
5x6 QFN TTA MIN Rev1
LS
HS
HD
HG
LG
LD
M0189-01
5x6 QFN TTA MIN Rev1
LS
HS
4
CSD87351Q5D
ZHCS132E –MARCH 2011–REVISED FEBRUARY 2017
www.ti.com.cn
Copyright © 2011–2017, Texas Instruments Incorporated
(1) Equivalent system performance based on application testing. See Application and Implementation details.
5.5 Electrical Characteristics
T
A
= 25°C (unless otherwise stated)
PARAMETER TEST CONDITIONS
Q1 Control FET Q2 Sync FET
MIN TYP MAX MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BV
DSS
Drain-to-source voltage V
GS
= 0 V, I
DS
= 250 μA 30 30 V
I
DSS
Drain-to-source leakage
current
V
GS
= 0 V, V
DS
= 24 V 1 1 μA
I
GSS
Gate-to-source leakage
current
V
DS
= 0 V, V
GS
= +10 / –8 100 100 nA
V
GS(th)
Gate-to-source threshold
voltage
V
DS
= V
GS
, I
DS
= 250 μA 1.0 2.1 0.75 1.15 V
Z
DS(on)
(1)
Effective AC on-impedance
V
IN
= 12 V, V
GS
= 5 V,
V
OUT
= 1.3 V, I
OUT
= 20 A,
ƒ
SW
= 500 kHz,
L
OUT
= 0.3 µH,
7.4 1.6 mΩ
g
fs
Transconductance V
DS
= 15 V, I
DS
= 20 A 75 142 S
DYNAMIC CHARACTERISTICS
C
ISS
Input capacitance
V
GS
= 0 V, V
DS
= 15 V,
ƒ = 1 MHz
966 1255 2410 3133 pF
C
OSS
Output capacitance 382 497 1130 1469 pF
C
RSS
Reverse transfer
capacitance
19 25 45 59 pF
R
G
Series gate resistance 0.9 1.8 1 2 Ω
Q
g
Gate charge total (4.5 V)
V
DS
= 15 V,
I
DS
= 20 A
5.9 7.7 17 22 nC
Q
gd
Gate charge gate-to-drain 1.1 3.1 nC
Q
gs
Gate charge gate-to-source 2.1 3.7 nC
Q
g(th)
Gate charge at Vth 1.1 2 nC
Q
OSS
Output charge V
DS
= 9.8 V, V
GS
= 0 V 6.5 23 nC
t
d(on)
Turnon delay time
V
DS
= 15 V, V
GS
= 4.5 V,
I
DS
= 20 A, R
G
= 2 Ω
6.1 7.7 ns
t
r
Rise time 16 10 ns
t
d(off)
Turnoff delay time 10 31 ns
t
f
Fall time 2.1 4.2 ns
DIODE CHARACTERISTICS
V
SD
Diode forward voltage I
DS
= 20 A, V
GS
= 0 V 0.86 1 0.78 1 V
Q
rr
Reverse recovery charge
V
dd
= 9.8 V, I
F
= 20 A,
di/dt = 300 A/μs
8.6 23 nC
t
rr
Reverse recovery time 16 24 ns
Max R
θJA
= 62°C/W
when mounted on 1
in
2
(6.45 cm
2
) of 2-
oz (0.071-mm) thick
Cu.
Max R
θJA
= 119°C/W
when mounted on
minimum pad area of
2-oz (0.071-mm) thick
Cu.
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