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DRV2625EVM-MINI 其他数据使用手册 - TI（德州仪器）
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TI（德州仪器）
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开发套件
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引脚图在P3P39Hot
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原理图在P1P10P60P61
封装尺寸在P70P73P75P76
焊盘布局在P71
标记信息在P73
封装信息在P69P73P74P75P76
技术参数、封装参数在P4
应用领域在P1P77
电气规格在P5
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DRV2625EVM-MINI数据手册
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4
DRV2625
SLOS879B –APRIL 2014–REVISED SEPTEMBER 2016
www.ti.com
Product Folder Links: DRV2625
Submit Documentation Feedback Copyright © 2014–2016, Texas Instruments Incorporated
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN MAX UNIT
Supply Voltage V
DD
–0.3 6 V
Input voltage
NRST –0.3 6 V
SDA –0.3 6 V
SCL –0.3 6 V
TRIG/INTZ –0.3 6 V
Operating free-air temperature range, T
A
–40 85 °C
Operating junction temperature range, T
J
–40 150 °C
Storage temperature, T
stg
–65 150 °C
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.2 ESD Ratings
MIN MAX UNIT
V
(ESD)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all
pins
(1)
–1500 1500
V
Charged device model (CDM), per JEDEC specification
JESD22-C101, all pins
(2)
–500 500
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
V
DD
Supply voltage 2.7 5.5 V
R
L
Load impedance 8 Ω
C
L
Load capacitance 100 pF
ƒ
(LRA)
LRA frequency 45 300 Hz
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
6.4 Thermal Information
THERMAL METRIC
(1)
DRV2625
UNITDSBGA
9 PINS
R
θJA
Junction-to-ambient thermal resistance 107 °C/W
R
θJC(top)
Junction-to-case (top) thermal resistance 0.9 °C/W
R
θJB
Junction-to-board thermal resistance 18.1 °C/W
ψ
JT
Junction-to-top characterization parameter 3.8 °C/W
ψ
JB
Junction-to-board characterization parameter 18.1 °C/W
R
θJC(bot)
Junction-to-case (bottom) thermal resistance — °C/W
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