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DS34RT5110-EVKC 其他数据使用手册 - TI（德州仪器）
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DS34RT5110-EVKC数据手册
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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
V
CC
to V
EE
−0.3V to 15V
V
CC
to IN_REF −0.3V to 15V
IN to IN_REF, nSHDN to IN_REF −0.3V to 15V
IN_REF to V
EE
−0.3V to 5V
Storage Temperature Range, (T
STG
) −55˚C to +150˚C
Maximum Junction Temperature,
(T
J
(max)) +150˚C
Operating Junction Temperature +125˚C
ESD Rating 2kV
Electrical Characteristics
T
J
= −40˚C to +125˚C, V
CC
= 12V, V
EE
= IN_REF = 0V, nSHDN = V
CC
, No Load on OUT_A or OUT_B, unless otherwise
specified.
Symbol Parameter Conditions Min Typ Max Units
V
CC
Operating Range V
CC
−IN_REF and V
CC
−V
EE
3.5 14 V
V
CCR
V
CC
Under Voltage Lockout
(rising)
V
CC
−IN_REF
2.3 2.9 3.5 V
V
CCH
V
CC
Under Voltage Lockout
Hysteresis
230 mV
I
CC
V
CC
Supply Current (I
CC
) IN_A = IN_B = 0V (5110-1) 1 2
mA
IN_A = IN_B = V
CC
(5110-2)
12
IN_A = V
CC
,IN_B=0V
(5110-3)
12
I
CCSD
V
CC
Shutdown Current (I
CC
) nSHDN = 0V 18 25 µA
CONTROL INPUTS
V
IH
Logic High 1.75 2.2 V
V
IL
Logic Low 0.8 1.35 V
HYS Input Hysteresis 400 mV
I
IL
Input Current Low IN_A=IN_B=V
CC
(5110-1-2-3)
−1 0.1 1
µA
I
IH
Input Current High IN_A=IN_B=V
CC
(5110-1) 10 18 25
IN_A=IN_B=V
CC
(5110-2) −1 0.1 1
IN_A=V
CC
(5110-3) -1 0.1 1
IN_B=V
CC
(5110-3) 10 18 25
SHUTDOWN INPUT
ISD Pull-up Current nSHDN=0V −18 −25 µA
VSDR Shutdown Threshold nSHDN rising 0.8 1.5 2.2 V
VSDH Shutdown Hysteresis 165 mV
OUTPUT DRIVERS
R
OH
Output Resistance High I
OUT
= −10 mA 30 50 Ω
R
OL
Output Resistance Low I
OUT
= + 10 mA 1.4 2.5 Ω
I
Source
Peak Source Current OUTA/OUTB = V
CC
/2,
200 ns Pulsed Current
3A
I
Sink
Peak Sink Current OUTA/OUTB = V
CC
/2,
200 ns Pulsed Current
5A
LM5110
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