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FDC6333C 其他数据使用手册 - Fairchild（飞兆/仙童）
制造商:
Fairchild（飞兆/仙童）
分类:
MOS管
封装:
TSOT-23-6
描述:
FAIRCHILD SEMICONDUCTOR FDC6333C 双路场效应管, MOSFET, N和P沟道, 2.5 A, 30 V, 0.095 ohm, 10 V, 1.8 V
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FDC6333C数据手册
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FDC6333C Rev C (W)
Electrical Characteristics T
A
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 µA
V
GS
= 0 V, I
D
= –250 µA
Q1
Q2
30
–30
V
∆BVDSS
∆T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 µA,Ref. to 25°C
I
D
= –250 µA,Ref. to 25°C
Q1
Q2
27
–22
mV/°C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
V
DS
= –24 V, V
GS
= 0 V
Q1
Q2
1
–1
µA
I
GSSF
Gate–Body Leakage, Forward
V
GS
= 16 V, V
DS
= 0 V
V
GS
= 25 V, V
DS
= 0 V
Q1
Q2
100
100
nA
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= –16 V, V
DS
= 0 V
V
GS
= –25 V, V
DS
= 0 V
Q1
Q2
–100
–100
nA
On Characteristics (Note 2)
V
GS(th)
Q1
V
DS
= V
GS
, I
D
= 250 µA
1 1.8 3Gate Threshold Voltage
Q2
V
DS
= V
GS
, I
D
= –250 µA
–1 –1.8 –3
V
∆VGS(th)
Q1
I
D
= 250 µA,Ref. To 25°C
4
∆T
J
Gate Threshold Voltage
Temperature Coefficient
Q2
I
D
= –250 µA,Ref. to 25°C
–4
mV/°C
R
DS(on)
Q1
V
GS
= 10 V, I
D
= 2.5 A
V
GS
= 4.5 V, I
D
= 2.0 A
V
GS
= 10 V, I
D
= 2.5 A,T
J
=125°C
73
90
106
95
150
148
Static Drain–Source
On–Resistance
Q2
V
GS
= –10 V, I
D
= –2.0 A
V
GS
=– 4.5 V, I
D
= –1.7 A
V
GS
= 10 V, I
D
= –2.0 A,T
J
=125°C
95
142
149
130
220
216
mΩ
I
D(on)
Q1
V
GS
= 10 V, V
DS
= 5 V
8On–State Drain Current
Q2
V
GS
= –10 V, V
DS
= –5 V
–8
A
g
FS
Q1
V
DS
= 5 V I
D
= 2.5 A
7
Forward Transconductance
Q2
V
DS
= –5 V I
D
= –2.0A
3
S
Dynamic Characteristics
C
iss
Q1
V
DS
=15 V, V
GS
= 0 V, f=1.0MHz
282
Input Capacitance
Q2
V
DS
=–15 V, V
GS
= 0 V, f=1.0MHz
185
pF
C
oss
Q1
V
DS
=15 V, V
GS
= 0 V, f=1.0MHz
49Output Capacitance
Q2
V
DS
=–15 V, V
GS
= 0 V, f=1.0MHz
56
pF
C
rss
Q1
V
DS
=15 V, V
GS
= 0 V, f=1.0MHz
20Reverse Transfer Capacitance
Q2
V
DS
=–15 V, V
GS
= 0 V, f=1.0MHz
26
pF
Switching Characteristics (Note 2)
t
d(on)
Q1
4.5 9
Turn–On Delay Time
Q2
4.5 9
ns
t
r
Q1
6 12
Turn–On Rise Time
Q2
13 23
ns
t
d(off)
Q1
19 34
Turn–Off Delay Time
Q2
11 20
ns
t
f
Q1
1.5 3
Turn–Off Fall Time
Q2
For Q1:
V
DS
=15 V, I
DS
= 1 A
V
GS
= 10 V, R
GEN
= 6 Ω
For Q2:
V
DS
=–15 V, I
DS
= –1 A
V
GS
= –10 V, R
GEN
= 6 Ω
2 4
ns
Q
g
Q1
4.7 6.6
Total Gate Charge
Q2
4.1 5.7
nC
Q
gs
Q1
0.9
Gate–Source Charge
Q2
0.8
nC
Q
gd
Q1
0.6
Gate–Drain Charge
Q2
For Q1:
V
DS
=15 V, I
DS
= 2.5 A
V
GS
= 10 V, R
GEN
= 6 Ω
For Q2:
V
DS
=–15 V, I
DS
= –2.0 A
V
GS
= –10 V,
0.4
nC
FDC6333C
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