Datasheet 搜索 > MOS管 > Fairchild（飞兆/仙童） > FDS4685 数据手册 > FDS4685 其他数据使用手册 3/7 页
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FDS4685 其他数据使用手册 - Fairchild（飞兆/仙童）
制造商:
Fairchild（飞兆/仙童）
分类:
MOS管
封装:
SOIC-8
描述:
FAIRCHILD SEMICONDUCTOR FDS4685. 晶体管, P沟道
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FDS4685数据手册
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www.fairchildsemi.com
FDS4685 Rev. C(W)
FDS4685 40V P-Channel PowerTrench
®
MOSFET
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design..
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
µ
s, Duty Cycle < 2.0%
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage V
GS
= 0 V, I
D
= –250
µ
A –40 V
∆
BV
DSS
∆
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= –250
µ
A, Referenced to 25
°
C –32 mV/
°
C
I
DSS
Zero Gate Voltage Drain Current V
DS
= –32 V, V
GS
= 0 V –1
µ
A
I
GSS
Gate–Body Leakage V
GS
=
±
20 V, V
DS
= 0 V
±
100 nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= –250
µ
A–1–1.6 –3 V
∆
V
GS(th)
∆
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= –250
µ
A, Referenced to 25
°
C 4.7 mV/
°
C
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= –10 V, I
D
= –8.2 A
V
GS
= –4.5 V, I
D
= –7 A
V
GS
= –10 V, I
D
= –8.2 A, T
J
= 125
°
C
22
29
31
27
35
42
m
Ω
g
FS
Forward Transconductance V
DS
= –5 V, I
D
= –8.2 A 22 S
Dynamic Characteristics
C
iss
Input Capacitance V
DS
= –20 V, V
GS
= 0 V,
f = 1.0 MHz
1872 pF
C
oss
Output Capacitance 256 pF
C
rss
Reverse Transfer Capacitance 134 pF
R
G
Gate Resistance V
GS
= 15 mV, f = 1MHz 4
Ω
Switching Characteristics
(Note 2)
t
d(on)
Tu r n–On Delay Time V
DD
= –20 V, I
D
= –1 A,
V
GS
= –10 V, R
GEN
= 6
Ω
14 25 ns
t
r
Tu r n–On Rise Time 11 20 ns
t
d(off)
Tu r n–Off Delay Time 50 80 ns
t
f
Tu r n–Off Fall Time 18 32 ns
Q
g
Total Gate Charge V
DS
= –20 V, I
D
= –8.2 A,
V
GS
= –5 V
19 27 nC
Q
gs
Gate–Source Charge 5.6 nC
Q
gd
Gate–Drain Charge 6.1 nC
Drain–Source Diode Characteristics
V
SD
Drain–Source Diode Forward Voltage V
GS
= 0 V, I
S
= –2.1 A (Note 2) –0.7 –1.2 V
t
rr
Diode Reverse Recovery Time I
F
= –8.2 A,
d
iF
/d
t
= 100 A/µs
26 nS
Q
rr
Diode Reverse Recovery Charge 15 nC
a) 50°C/W when mounted
on a 1 in
2
pad of 2 oz
copper
b) 105°/W when mounted
on a .04 in
2
pad of 2 oz
copper
c) 125°/W when mounted
on a minimum pad.
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