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FDS4685 其他数据使用手册 - Fairchild（飞兆/仙童）
制造商:
Fairchild（飞兆/仙童）
分类:
MOS管
封装:
SOIC-8
描述:
FAIRCHILD SEMICONDUCTOR FDS4685. 晶体管, P沟道
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FDS4685数据手册
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4
www.fairchildsemi.com
FDS4685 Rev. C(W)
FDS4685 40V P-Channel PowerTrench
®
MOSFET
Typical Characteristics:
0
2
4
6
8
10
051015 20 25 30 35 40
Q
g
, GATE CHARGE (nC)
-V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= -8.2A
V
DS
= -10V
-20V
-30V
0
500
1000
1500
2000
2500
051015 20 25 30 35 40
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
C
ISS
C
OSS
C
RSS
f = 1 MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1 1 10 100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
DC
10s
1s
100ms
100µs
R
DS(ON)
LIMIT
V
GS
= -10V
SINGLE PULSE
R
θ
JA
= 125°C/W
T
A
= 25°C
10ms
1ms
0
10
20
30
40
50
0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
R
θ
JA
= 125°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
R
θ
JA
(t) = r(t) * R
θ JA
R
θ
JA
= 125°C/W
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
D = 0.5
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
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