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FMMT718 产品封装文件 - Diodes（美台）
制造商:
Diodes（美台）
封装:
SOT-23
描述:
单晶体管 双极, PNP, 20 V, 180 MHz, 625 mW, -1.5 A, 475 hFE
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FMMT718数据手册
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FMMT718
Document Number: DS31924 Rev. 4 - 2
2 of 7
www.diodes.com
October 2012
© Diodes Incorporated
A
Product Line o
f
Diodes Incorporated
FMMT718
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
-20 V
Collector-Emitter Voltage
V
CEO
-20 V
Emitter-Base Voltage
V
EBO
-7 V
Continuous Collector Current
I
C
-1.5 A
Peak Pulse Current
I
CM
-6 A
Base Current
I
B
-500 mA
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 6)
P
D
625 mW
Power Dissipation (Note 7)
P
D
806 mW
Thermal Resistance, Junction to Ambient (Note 6)
R
θJA
200
°C/W
Thermal Resistance, Junction to Ambient (Note 7)
R
θJA
155
°C/W
Thermal Resistance, Junction to Leads (Note 8)
R
θJL
194
°C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
ESD Ratings (Note 9)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM ≥ 400 V C
Notes: 6. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
7. Same as note 6, except the device is measured at t ≤ 5 sec.
8. Thermal resistance from junction to solder-point (at the end of the collector lead).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
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