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FQPF27P06 其他数据使用手册 - Fairchild（飞兆/仙童）
制造商:
Fairchild（飞兆/仙童）
分类:
MOS管
封装:
TO-220-3
描述:
FAIRCHILD SEMICONDUCTOR FQPF27P06 晶体管, MOSFET, P沟道, -17 A, -60 V, 0.055 ohm, -10 V, -2 V
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技术参数、封装参数在P2P9
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FQPF27P06数据手册
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FQPF27P06
Thermal Characteristics
Symbol Parameter FQPF27P06 Unit
V
DSS
Drain-Source Voltage -60 V
I
D
Drain Current
- Continuous (T
C
= 25°C)
-17 A
- Continuous (T
C
= 100°C)
-12 A
I
DM
Drain Current - Pulsed
(Note 1)
-68 A
V
GSS
Gate-Source Voltage ± 25 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
560 mJ
I
AR
Avalanche Current
(Note 1)
-17 A
E
AR
Repetitive Avalanche Energy
(Note 1)
4.7 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
-7.0 V/ns
P
D
Power Dissipation (T
C
= 25°C)
47 W
- Derate above 25°C 0.31 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +175 °C
T
L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C
Symbol Parameter Typ Max
Unit
R
θJC
Thermal Resistance, Junction-to-Case -- 3.19 °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W
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FQPF27P06 P-Channel MOSFET
Description
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor
®
’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and
variable switching power applications.
Features
•
-17 A, -60 V, R
DS(on)
=26 mΩ(Max.) @V
GS
=-10 V, I
D
=-8.5 A
•
Low Gate Charge (Typ. 33 nC)
•
Low Crss (Typ. 120 pF)
•
100% Avalanche Tested
March 2013
P-Channel QFET
®
MOSFET
-60 V, -17 A, 26 mΩ
•
175°C Maximum Junction Temperature Rating
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
TO-220F
G D
S
©2001 Fairchild Semiconductor Corporation
FQPF27P06 Rev. C0
www.fairc
hildsemi.com
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