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FQPF27P06 其他数据使用手册 - Fairchild(飞兆/仙童)
制造商:
Fairchild(飞兆/仙童)
分类:
MOS管
封装:
TO-220-3
描述:
FAIRCHILD SEMICONDUCTOR FQPF27P06 晶体管, MOSFET, P沟道, -17 A, -60 V, 0.055 ohm, -10 V, -2 V
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
封装尺寸在P8
型号编码规则在P10
标记信息在P1P9P10
技术参数、封装参数在P2P9
导航目录
FQPF27P06数据手册
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of 10 Go
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10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
※
Notes :
1. Z
θ
JC
(t) = 3.19
℃
/W Max.
2. D uty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θ
JC
(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
Z
θ
JC
(t), Thermal Response
t
1
, Square W ave Pulse Duration [sec]
25 50 75 100 125 150 175
0
3
6
9
12
15
18
-I
D
, Drain Current [A]
T
C
, Case Temperature [
℃
]
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
100 ms
DC
10 ms
1 ms
Operation in This Area
is Limited by R
DS(on)
※
Notes :
1. T
C
= 25
o
C
2. T
J
= 175
o
C
3. Single Pulse
-I
D
, Drain Current [A]
-V
DS
, Drain-Source Voltage [V]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
※
Notes :
1. V
GS
= -10 V
2. I
D
= -13.5 A
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
T
J
, Junction Temperature [
o
C]
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
※
Notes :
1. V
GS
= 0 V
2. I
D
= -250
μ
A
-BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
T
J
, Junction Temperature [
o
C]
Typical Characteristics (Continued)
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
Figure 11. Transient Thermal Response Curve
t
1
P
DM
t
2
FQPF27P06 P-Channel MOSFET
©2001 Fairchild Semiconductor Corporation
FQPF27P06 Rev. C0
www.fairc
hildsemi.com
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