Datasheet 搜索 > 光耦合器/光隔离器 > Fairchild（飞兆/仙童） > H11F3VM 数据手册 > H11F3VM 其他数据使用手册 1/11 页
器件3D模型￥ 13.788
H11F3VM 其他数据使用手册 - Fairchild（飞兆/仙童）
制造商:
Fairchild（飞兆/仙童）
分类:
光耦合器/光隔离器
封装:
PDIP-6
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H11F3VM数据手册
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若手册格式错乱，请下载阅览PDF原文件
H11F1M, H11F2M, H11F3M — Photo FET Optocouplers
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11F1M, H11F2M, H11F3M Rev. 1.0.5
May 2012
H11F1M, H11F2M, H11F3M
Photo FET Optocouplers
Features
As a remote variable resistor:
■
≤
100
Ω
to
≥
300M
Ω
■
≤
15pF shunt capacitance
■
≥
100G
Ω
I/O isolation resistance
As an analog switch:
■
Extremely low offset voltage
■
60 V
pk-pk
signal capability
■
No charge injection or latch-up
■
UL recognized (File #E90700)
Applications
As a remote variable resistor:
■
Isolated variable attenuator
■
Automatic gain control
■
Active filter fine tuning/band switching
As an analog switch:
■
Isolated sample and hold circuit
■
Multiplexed, optically isolated A/D conversion
General Description
The H11FXM series consists of a Gallium-Aluminum-
Arsenide IRED emitting diode coupled to a symmetrical
bilateral silicon photo-detector. The detector is electri-
cally isolated from the input and performs like an ideal
isolated FET designed for distortion-free control of low
level AC and DC analog signals. The H11FXM series
devices are mounted in dual in-line packages.
Schematic Package Outlines
1
2
6
5
4
OUTPUT
TERM.
OUTPUT
TERM.
ANODE
CATHODE
3
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