Datasheet 搜索 > 光耦合器/光隔离器 > Fairchild（飞兆/仙童） > H11F3VM 数据手册 > H11F3VM 其他数据使用手册 3/11 页
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H11F3VM 其他数据使用手册 - Fairchild（飞兆/仙童）
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Fairchild（飞兆/仙童）
分类:
光耦合器/光隔离器
封装:
PDIP-6
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H11F3VM数据手册
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若手册格式错乱，请下载阅览PDF原文件
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11F1M, H11F2M, H11F3M Rev. 1.0.5 3
H11F1M, H11F2M, H11F3M — Photo FET Optocouplers
Electrical Characteristics
(T
A
= 25°C unless otherwise specified.)
Individual Component Characteristics
Transfer Characteristics
Isolation Characteristics
*All Typical values at T
A
= 25°C
Symbol Parameter Test Conditions Device Min. Typ.* Max. Unit
EMITTER
V
F
Input Forward Voltage I
F
= 16mA All 1.3 1.75 V
I
R
Reverse Leakage Current V
R
= 5V All 10 µA
C
J
Capacitance V = 0 V, f = 1.0MHz All 50 pF
OUTPUT DETECTOR
BV
4-6
Breakdown Voltage
Either Polarity
I
4-6
= 10µA, I
F
= 0 H11F1M, H11F2M 30 V
H11F3M 15
I
4-6
Off-State Dark Current V
4-6
= 15 V, I
F
= 0 All 50 nA
V
4-6
= 15 V, I
F
= 0,
T
A
= 100°C
All 50 µA
R
4-6
Off-State Resistance V
4-6
= 15 V, I
F
= 0 All 300 M
Ω
C
4-6
Capacitance V
4-6
= 15 V, I
F
= 0,
f = 1MHz
All 15 pF
Symbol Characteristics Test Conditions Device Min Typ* Max Units
DC CHARACTERISTICS
R
4-6
On-State Resistance I
F
= 16mA,
I
4-6
= 100µA
H11F1M 200
Ω
H11F2M 330
H11F3M 470
R
6-4
On-State Resistance I
F
= 16mA,
I
6-4
= 100µA
H11F1M 200
Ω
H11F2M 330
H11F3M 470
Resistance, non-linearity
and assymetry
I
F
= 16mA,
I
4-6
= 25µA RMS,
f = 1kHz
All 2 %
AC CHARACTERISTICS
t
on
Turn-On Time R
L
= 50
Ω
, I
F
= 16mA,
V
4-6
= 5V
All 45 µs
t
off
Turn-Off Time R
L
= 50
Ω
, I
F
= 16mA,
V
4-6
= 5V
All 45 µs
Symbol Characteristic Test Conditions Device Min. Typ.* Max. Units
V
ISO
Isolation Voltage f = 60Hz, t = 1 sec. All 7500 V
AC
PEAK
R
ISO
Isolation Resistance V
I-O
= 500 VDC All 10
11
Ω
C
ISO
Isolation Capacitance f = 1MHz All 0.2 pF
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