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H11G1 其他数据使用手册 - CTS（西迪斯）
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H11G1数据手册
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©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11G1M, H11G2M Rev. 1.0.5 3
H11G1M, H11G2M — 6-Pin DIP High Voltage Photodarlington Optocouplers
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol Parameter Value Unit
TOTAL DEVICE
T
STG
Storage Temperature -40 to +125 °C
T
OPR
Operating Temperature -40 to +100 °C
T
J
Junction Temperature -40 to +125 ºC
T
SOL
Lead Solder Temperature 260 for 10 seconds °C
P
D
Total Device Power Dissipation @ T
A
= 25°C 290 mW
Derate Above 25°C 3.5 mW/°C
EMITTER
I
F
Forward Input Current 60 mA
V
R
Reverse Input Voltage 6.0 V
I
F
(pk) Forward Current – Peak (1 µs pulse, 300 pps) 3.0 A
P
D
LED Power Dissipation @ T
A
= 25°C 90 mW
Derate Above 25°C 1.8 mW/°C
DETECTOR
V
CEO
Collector-Emitter Voltage
H11G1M 100 V
H11G2M 80 V
P
D
Photodetector Power Dissipation @ T
A
= 25°C 200 mW
Derate Above 25°C 2.67 mW/°C
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