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H11G1 其他数据使用手册 - CTS（西迪斯）
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H11G1数据手册
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©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11G1M, H11G2M Rev. 1.0.5 4
H11G1M, H11G2M — 6-Pin DIP High Voltage Photodarlington Optocouplers
Electrical Characteristics
T
A
= 25°C unless otherwise specified.
Individual Component Characteristics
Transfer Characteristics
Isolation Characteristics
Symbol Characteristic Test Conditions Device Min. Typ. Max. Unit
EMITTER
V
F
Forward Voltage I
F
= 10 mA All 1.3 1.5 V
Δ
V
F
Δ
T
A
Forward Voltage
Temperature Coefficient
All -1.8 mV/°C
BV
R
Reverse Breakdown
Voltage
I
R
= 10 µA All 3.0 25 V
C
J
Junction Capacitance
V
F
= 0 V, f = 1 MHz
All
50 pF
V
F
= 1 V, f = 1 MHz 65
pF
I
R
Reverse Leakage
Current
V
R
= 3.0V All 0.001 10 µA
DETECTOR
BV
CEO
Breakdown Voltage
Collector to Emitter
I
C
= 1.0 mA, I
F
= 0
H11G1M 100 V
H11G2M 80 V
BV
CBO
Collector to Base I
C
= 100 µA
H11G1M 100 V
H11G2M 80 V
BV
EBO
Emitter to Base All 7 10 V
I
CEO
Leakage Current
Collector to Emitter
V
CE
= 80 V, I
F
= 0 H11G1M 100 nA
V
CE
= 60 V, I
F
= 0 H11G2M 100 nA
V
CE
= 80 V, I
F
= 0, T
A
= 80°C H11G1M 100 µA
V
CE
= 60 V, I
F
= 0, T
A
= 80°C H11G2M 100 µA
Symbol Characteristics Test Conditions Device Min. Typ. Max. Unit
EMITTER
CTR
Current Transfer Ratio,
Collector to Emitter
I
F
= 10 mA, V
CE
= 1 V All
100
(1000)
mA (%)
I
F
= 1 mA, V
CE
= 5 V All 5 (500) mA (%)
V
CE(SAT)
Saturation Voltage
I
F
= 16 mA, I
C
= 50 mA All 0.85 1.0 V
I
F
= 1 mA, I
C
= 1 mA All 0.75 1.0 V
SWITCHING TIMES
t
ON
Turn-on Time R
L
= 100
Ω
, I
F
= 10 mA,
V
CE
= 5 V, f
≤
30 Hz,
Pulse Width
≤
300 µs
All 5 µs
t
OFF
Turn-off Time All 100 µs
Symbol Characteristic Test Conditions Min. Typ. Max. Unit
V
ISO
Input-Output Isolation Voltage t = 1 Minute 4170 VAC
RMS
C
ISO
Isolation Capacitance V
I-O
= 0 V, f = 1 MHz 0.2 pF
R
ISO
Isolation Resistance V
I-O
= ±500 VDC, T
A
= 25°C 10
11
Ω
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