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101 North Sepulveda Boulevard, El Segundo, California, 90245, USA Telephone: +1 310 726 8000 www.irf.com
Date: September 27, 2012
PCN Reference: F12-0001
Product Reference: 55V & 60V D2-PAK, TO-262, TO-220 Gen 7
To Our Valued Customer:
As always we appreciate your use of International Rectifier semiconductor products. Our
commitment to customer satisfaction and continuous improvement is demonstrated by our
change plans to enhance capacity, quality and reliability. This notice is to inform you of the
following changes.
We would like to express our sincere appreciation for your cooperation regarding the following
changes, and IR will work closely with you to support your requirements during this transition.
Type of Change Notification:
Additional wafer manufacturing site
Description of Change:
Qualify AMPI foundry as 2nd source for manufacturing products detailed in the following parts
list.
Reason for the Change:
Additional wafer manufacturing site
Effect Date:
December 27, 2012
International Rectifier will consider this change approved and will implement it by the effective
date unless specific conditions of acceptance or data requests are provided in writing within 90
days of receipt of this notice. Please submit conditions of acceptance and data requests to the
PCN coordinator listed at the end of this notice.
Process Change Notification

IRF1010EPBF 数据手册

International Rectifier(国际整流器)
8 页 / 0.23 MByte
International Rectifier(国际整流器)
20 页 / 2.6 MByte
International Rectifier(国际整流器)
2 页 / 0.03 MByte

IRF1010 数据手册

VISHAY(威世)
Infineon(英飞凌)
INFINEON  IRF1010EPBF  晶体管, MOSFET, N沟道, 81 A, 60 V, 12 mohm, 10 V, 4 V
Infineon(英飞凌)
INFINEON  IRF1010NPBF  晶体管, MOSFET, N沟道, 68 A, 55 V, 0.011 ohm, 10 V, 4 V
Infineon(英飞凌)
INFINEON  IRF1010EZPBF  晶体管, MOSFET, N沟道, 84 A, 60 V, 8.5 mohm, 10 V, 4 V
Infineon(英飞凌)
HEXFET® N 通道功率 MOSFET 超过 55A,Infineon### MOSFET 晶体管,Infineon (IR)Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度,且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品,从电动机控制到照明和家用电器。
International Rectifier(国际整流器)
INTERNATIONAL RECTIFIER  IRF1010EPBF  场效应管, N 通道, MOSFET, 60V, 84A TO-220AB 新
Infineon(英飞凌)
N 沟道 60 V 200 W 130 nC Hexfet 功率 MOSFET 表面贴装 - D2PAK
Infineon(英飞凌)
场效应管(MOSFET) IRF1010NSTRRPBF D2PAK
Infineon(英飞凌)
N 通道功率 MOSFET 80A 至 99A,InfineonInfineon 的分立 HEXFET® 功率 MOSFET 系列包括表面安装和引线封装的 N 通道设备,外形可应对几乎任何板布局和热设计挑战。 在整个范围内,基准导通电阻减少了传导损耗,让设计人员可以提供最佳系统效率。### MOSFET 晶体管,Infineon (IR)Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度,且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品,从电动机控制到照明和家用电器。
Infineon(英飞凌)
IRF1010EZSTRLP 编带
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