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IRF3708S数据手册
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8/22/00
IRF3708
IRF3708S
SMPS MOSFET
HEXFET
®
Power MOSFET
l High Frequency DC-DC Isolated Converters
with Synchronous Rectification for Telecom
and Industrial Use
Benefits
Applications
l Ultra-Low Gate Impedance
l Very Low R
DS(on)
at 4.5V V
GS
l Fully Characterized Avalanche Voltage
and Current
V
DSS
R
DS(on)
max I
D
30V 12m 62A
Notes through are on page 10
Absolute Maximum Ratings
Symbol Parameter Max. Units
V
DS
Drain-Source Voltage 30 V
V
GS
Gate-to-Source Voltage ±12 V
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 62
I
D
@ T
C
= 70°C Continuous Drain Current, V
GS
@ 10V 52 A
I
DM
Pulsed Drain Current 248
P
D
@T
C
= 25°C Maximum Power Dissipation 87 W
P
D
@T
C
= 70°C Maximum Power Dissipation 61 W
Linear Derating Factor 0.58 W/°C
T
J
, T
STG
Junction and Storage Temperature Range -55 to + 175 °C
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
D
2
Pak
IRF3708S
TO-220AB
IRF3708
TO-262
IRF3708L
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 1.73
R
θCS
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
R
θJA
Junction-to-Ambient ––– 62
R
θJA
Junction-to-Ambient (PCB mount)* ––– 40
IRF3708L
l High Frequency Buck Converters for
Computer Processor Power
PD - 93938B

IRF3708S 数据手册

International Rectifier(国际整流器)
11 页 / 0.16 MByte
International Rectifier(国际整流器)
10 页 / 0.13 MByte

IRF3708 数据手册

International Rectifier(国际整流器)
Infineon(英飞凌)
IRF
功率MOSFET ( VDSS = 30V , RDS(ON)最大值= 12mohm ,ID = 62A ) Power MOSFET(Vdss=30V, Rds(on)max=12mohm, Id=62A)
Infineon(英飞凌)
INFINEON  IRF3708PBF  晶体管, MOSFET, N沟道, 62 A, 30 V, 12 mohm, 10 V, 2 V
International Rectifier(国际整流器)
International Rectifier(国际整流器)
Infineon(英飞凌)
Infineon(英飞凌)
Infineon(英飞凌)
International Rectifier(国际整流器)
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