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IRL2703STRL 其他数据使用手册 - Infineon（英飞凌）
制造商:
Infineon（英飞凌）
分类:
MOS管
封装:
TO-263-3
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
封装尺寸在P8
标记信息在P8
技术参数、封装参数在P1
电气规格在P2
导航目录
IRL2703STRL数据手册
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of 10 Go
若手册格式错乱，请下载阅览PDF原文件
HEXFET
®
Power MOSFET
IRL2703S
PD - 9.1360
l Logic-Level Gate Drive
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
V
DSS
= 30V
R
DS(on)
= 0.04Ω
I
D
= 24A
S
D
G
11/18/96
PRELIMINARY
Parameter Min. Typ. Max. Units
R
θJC
Junction-to-Case –––– –––– 3.3
R
θJA
Junction-to-Ambient (PCB Mount,steady-state)** –––– –––– 40
Thermal Resistance
°C/W
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 24
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 17 A
I
DM
Pulsed Drain Current 96
P
D
@T
C
= 25°C Power Dissipation 45 W
Linear Derating Factor 0.30 W/°C
V
GS
Gate-to-Source Voltage ±16 V
E
AS
Single Pulse Avalanche Energy 77 mJ
I
AR
Avalanche Current 14 A
E
AR
Repetitive Avalanche Energy 4.5 mJ
dv/dt Peak Diode Recovery dv/dt 3.5 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Absolute Maximum Ratings
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The D
2
PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
Description
2
D Pak
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