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Datasheet 搜索 > EEPROM芯片 > ST Microelectronics(意法半导体) > M24C04-DRDW3TP/K 数据手册 > M24C04-DRDW3TP/K 其他数据使用手册 6/43 页
M24C04-DRDW3TP/K
器件3D模型
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M24C04-DRDW3TP/K数据手册
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Description M24C04-DRE
6/42 DocID027421 Rev 2
1 Description
The M24C04-DRE is a 4-Kbit serial EEPROM device operating up to 105 °C. The M24C04-
DRE is compliant with the level of reliability defined by the AEC-Q100 grade 2.
The device is accessed by a simple serial I
2
C compatible interface running up to 1 MHz.
The memory array is based on advanced true EEPROM technology (electrically erasable
programmable memory). The M24C04-DRE is a byte-alterable memory (512 × 8
bits)
organized as 32
pages of 16 bytes in which the data integrity is significantly improved with
an embedded Error Correction Code logic.
The M24C04-DRE offers an additional Identification Page (16 bytes) in which the ST device
identification can be read. This page can also be used to store sensitive application
parameters which can be later permanently locked in read-only mode.
Figure 1. Logic diagram
-36
7#
#ONTROLLOGIC
(IGHVOLTAGE
GENERATOR
)/SHIFTREGISTER
!DDRESSREGISTER
ANDCOUNTER
$ATA
REGISTER
PAGE
8DECODER
9DECODER
)DENTIFICATIONPAGE
%I
3#,
3$!

M24C04-DRDW3TP/K 数据手册

ST Microelectronics(意法半导体)
40 页 / 0.58 MByte
ST Microelectronics(意法半导体)
43 页 / 1.15 MByte

M24C04DRDW3 数据手册

ST Microelectronics(意法半导体)
EEPROM, 4 Kbit, 512 x 8位, 串行I2C (2-线), 1 MHz, TSSOP, 8 引脚
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